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公开(公告)号：US20050008950A1
公开(公告)日：2005-01-13
申请号：US10912030
申请日：2004-08-04
申请人： H. Dulman , William Stanton , John Futrell
发明人： H. Dulman , William Stanton , John Futrell
CPC分类号： G03F1/36
摘要： The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.
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公开(公告)号：US20050008953A1
公开(公告)日：2005-01-13
申请号：US10912510
申请日：2004-08-04
申请人： H. Dulman , William Stanton , John Futrell
发明人： H. Dulman , William Stanton , John Futrell
CPC分类号： G03F1/36
摘要： The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.
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公开(公告)号：US20050008952A1
公开(公告)日：2005-01-13
申请号：US10912256
申请日：2004-08-04
申请人： H. Dulman , William Stanton , John Futrell
发明人： H. Dulman , William Stanton , John Futrell
CPC分类号： G03F1/36
摘要： The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.
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公开(公告)号：US20050008949A1
公开(公告)日：2005-01-13
申请号：US10912029
申请日：2004-08-04
申请人： H. Dulman , William Stanton , John Futrell
发明人： H. Dulman , William Stanton , John Futrell
CPC分类号： G03F1/36
摘要： The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.
摘要翻译： 本发明包括形成图案化的掩模版的方法。 在光学邻近校正之前，可以将设计特征引入到掩模版的布局中，然后在将图案胶带到掩模版之前去除。 可以替代地或另外地，在光学邻近校正之后引入设计特征，而不对称地相对于掩模版图案的一个或多个部分。 引入的特征随后可以作为形成图案化的掩模版的一部分而被粘贴在掩模版上。
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公开(公告)号：US20050008951A1
公开(公告)日：2005-01-13
申请号：US10912031
申请日：2004-08-04
申请人： H. Dulman , William Stanton , John Futrell
发明人： H. Dulman , William Stanton , John Futrell
CPC分类号： G03F1/36
摘要： The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.
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公开(公告)号：US20050026052A1
公开(公告)日：2005-02-03
申请号：US10931883
申请日：2004-09-01
申请人： H. Dulman
发明人： H. Dulman
摘要： The invention includes, for example, a radiation patterning tool which can be utilized to form relatively circular contacts in situations in which an array of contacts has a different pitch along a row of the array than along a column of the array. An alternating phase shift can give a well-defined contact in the small pitch (dense) direction. Rim shifters are added in the larger pitch direction to force the circular form of the contact openings. In further aspects of the invention, side-lobe-suppressing patterns can be added between adjacent rims. The invention also includes methods of forming radiation patterning tools.
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