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公开(公告)号：US07226845B2
公开(公告)日：2007-06-05
申请号：US11215243
申请日：2005-08-30
IPC分类号： H01L21/331
CPC分类号： H01L27/10894 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/945 , Y10S257/906
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
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公开(公告)号：US07271051B2
公开(公告)日：2007-09-18
申请号：US11272232
申请日：2005-11-10
IPC分类号： H01L21/8234
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L29/66181
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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公开(公告)号：US07125781B2
公开(公告)日：2006-10-24
申请号：US10733181
申请日：2003-12-10
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L29/66181
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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4.发明申请Semiconductor Constructions Containing Tubular Capacitor Storage Nodes, And Retaining Structures Along Portions Of The Tubular Capacitor Storage Nodes 有权包含管状电容器存储节点和保留结构的半导体结构沿管状电容器存储节点的一部分公开(公告)号：US20120168903A1
公开(公告)日：2012-07-05
申请号：US13413552
申请日：2012-03-06
IPC分类号： H01L29/02
CPC分类号： H01L27/10894 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/945 , Y10S257/906
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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公开(公告)号：US08154064B2
公开(公告)日：2012-04-10
申请号：US12853948
申请日：2010-08-10
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/10894 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/945 , Y10S257/906
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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公开(公告)号：US07449391B2
公开(公告)日：2008-11-11
申请号：US11272247
申请日：2005-11-10
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L29/66181
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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公开(公告)号：US20100320566A1
公开(公告)日：2010-12-23
申请号：US12853948
申请日：2010-08-10
IPC分类号： H01L29/92
CPC分类号： H01L27/10894 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/945 , Y10S257/906
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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8.发明授权Semiconductor constructions containing tubular capacitor storage nodes, and retaining structures along portions of the tubular capacitor storage nodes 有权包含管状电容器存储节点的半导体结构和沿着管状电容器存储节点的部分的保持结构公开(公告)号：US08519463B2
公开(公告)日：2013-08-27
申请号：US13413552
申请日：2012-03-06
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/10894 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/945 , Y10S257/906
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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9.发明授权Semiconductor constructions containing tubular capacitor storage nodes, and retaining structures along portions of the tubular capacitor storage nodes 有权包含管状电容器存储节点的半导体结构和沿着管状电容器存储节点的部分的保持结构公开(公告)号：US07781818B2
公开(公告)日：2010-08-24
申请号：US11595436
申请日：2006-11-09
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/10894 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/945 , Y10S257/906
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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公开(公告)号：US07736987B2
公开(公告)日：2010-06-15
申请号：US11742983
申请日：2007-05-01
IPC分类号： H01L21/20
CPC分类号： H01L27/10894 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/945 , Y10S257/906
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。
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