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1.
公开(公告)号:US20230080101A1
公开(公告)日:2023-03-16
申请号:US17930112
申请日:2022-09-07
申请人: HAESUNG DS CO., LTD.
发明人: Dong Jin YOON , Sung Il KANG , In Seob BAE , Seok Kyu SEO , Dong Young PYEON
IPC分类号: H01L23/12 , H01L23/00 , H01L21/48 , H01L23/053
摘要: Provided are a semiconductor package substrate, a method of manufacturing the semiconductor package substrate, and a semiconductor package. According to one embodiment of the present disclosure, a semiconductor package substrate includes a base substrate having a lower surface in which a first trench is provided and an upper surface in which a second trench and a third trench are provided, including a circuit pattern and a conductive material; a first resin arranged in the first trench; and a second resin arranged in the second trench and the third trench, wherein the second trench exposes at least a part of the first resin.
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公开(公告)号:US20240194571A1
公开(公告)日:2024-06-13
申请号:US17620053
申请日:2021-07-01
申请人: HAESUNG DS CO., LTD.
发明人: Do Yeon WOO , Seok Kyu SEO , Byoungchul CHOI
IPC分类号: H01L23/495
CPC分类号: H01L23/49548
摘要: According to an aspect of the present disclosure, provided is a lead frame including a plurality of lead with a lead groove formed therein; and a dambar arranged between the leads to connect the leads, wherein a thickness of the dambar arranged between the leads has at least two thickness values, and a dambar groove is formed between a thickest portion of the dambar and the lead neighboring the thickest portion of the dambar.
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公开(公告)号:US20230102887A1
公开(公告)日:2023-03-30
申请号:US17930537
申请日:2022-09-08
申请人: HAESUNG DS CO., LTD.
发明人: Dong Jin Yoon , Sung Il Kang , In Seob BAE , Seok Kyu SEO , Dong Young Pyeon
IPC分类号: H01L23/495 , H01L21/56
摘要: A lead frame includes: leads; and a dambar arranged between the leads and connecting the leads to each other, wherein each of the leads includes: a lower lead groove formed in a first surface for a wettable flank structure; and an upper lead groove formed in a second surface opposite the first surface and aligned with the lower lead groove in a thickness direction, wherein in a sawing process, a portion of the lead between the lower lead groove and the upper lead groove is at least partially removed.
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