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公开(公告)号:US3644097A
公开(公告)日:1972-02-22
申请号:US3644097D
申请日:1968-11-13
Applicant: HALDOR FREDERIK AXEL FRYDENLUN
Inventor: KNUDSEN POUL E
CPC classification number: C30B13/28 , Y10T117/1088
Abstract: Control of heat radiation from the ''''critical zone'''' adjacent the molten material in a floating-zone purification of a semiconductor monocrystal to achieve a low level of dislocations.