公开(公告)号：US4140571A

公开(公告)日：1979-02-20

申请号：US840887

申请日：1977-10-11

申请人： Heinz Herzer ,  Helmut Zauhar ,  Eberhard Mucke ,  Franz Kohl

发明人： Heinz Herzer ,  Helmut Zauhar ,  Eberhard Mucke ,  Franz Kohl

IPC分类号： C30B13/00 ,  C30B13/20 ,  C30B13/28 ,  H01L21/208 ,  B01J17/10

CPC分类号： C30B13/285 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1084

摘要： A process for the crucible-free zone pulling of a polycrystalline rod heldertically, together with a seed crystal fixed at its lower end, in which a melting zone is produced by means of an induction heating coil surrounding the rod, which zone, by means of relative movement of the coil and rod, traverses the entire length of the rod starting from the seed crystal, characterized in that after attaching the seed crystal to the rod, a support member is moved, below the induction heating coil, towards the rod, which support member rests gently against the rod and after being positioned, solidifies to form a firm support for the rod. A device for carrying out the process is also included.

摘要翻译： 一种无坩埚区域牵引垂直保持的多晶棒的方法，以及固定在其下端的晶种，其中通过围绕杆的感应加热线圈产生熔融区，该区域通过装置 所述线圈和所述杆的相对运动通过从所述晶种开始的所述杆的整个长度，其特征在于，在将所述晶种连接到所述杆之后，支撑构件在所述感应加热线圈下方朝向所述杆移动， 该支撑构件轻轻靠在杆上并在定位之后固化以形成用于杆的坚固支撑。 还包括用于执行该过程的设备。

公开(公告)号：US4092124A

公开(公告)日：1978-05-30

申请号：US707957

申请日：1976-07-23

申请人： Hans Stut

发明人： Hans Stut

IPC分类号： C30B13/20 ,  C30B13/32 ,  H01L21/208 ,  B01J17/10

CPC分类号： C30B13/32 ,  Y10T117/1088

摘要： An apparatus for floating melt zone processing of a semiconductor rod including an axially fixed induction heating coil wherein the heating coil is attached to a horizontal shift means having an amplitude sufficiently great to move the coil away from the rod during insertion and/or removal of the rod in the apparatus.

摘要翻译： 一种用于包括轴向固定的感应加热线圈的半导体棒的浮动熔融区处理的装置，其中加热线圈附接到具有足够大的振幅的水平移动装置，以在插入和/或移除线圈期间使线圈远离杆移动 杆在设备中。

公开(公告)号：US3996096A

公开(公告)日：1976-12-07

申请号：US638261

申请日：1975-12-08

申请人： Wolfgang Keller

发明人： Wolfgang Keller

IPC分类号： C30B13/28 ,  B01J17/10

CPC分类号： C30B13/285 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1084

摘要： Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.

摘要翻译： 将多晶半导体棒通过将多晶棒定位在无坩埚区熔融环境中而将其转化为无位错的单晶棒，其中晶种与其一端相连，在晶种和多晶棒的接合处产生熔融区， 将熔体区域可控地移动离开接合点并通过多晶棒到其上的选择点，均匀地支撑被处理的杆的锥形下部，以防止在种子的杆的接合处的振荡等 晶体并且可控地将熔体区域从选择点移动到杆的剩余部分。 优选地，均匀的支撑件由可轴向移动的漏斗形壳体提供，所述壳体附接到晶种保持构件，并且当移动到其操作位置时，填充有自调节振动或减振装置，例如熔融金属 ，金属球体，石英颗粒，沙子等

公开(公告)号：US3936346A

公开(公告)日：1976-02-03

申请号：US428266

申请日：1973-12-26

申请人： William W. Lloyd

发明人： William W. Lloyd

IPC分类号： C30B13/20 ,  C30B15/02 ,  C30B15/10 ,  C30B15/14 ,  B01J17/10

CPC分类号： C30B15/02 ,  C30B13/20 ,  C30B15/10 ,  C30B15/14 ,  Y10S117/90

摘要： The disclosure relates to the growth of single crystal material from polycrystalline material by combining the pedestal and cold crucible techniques to yield a method of producing large, high purity single crystals on a commercial scale. The method includes feeding a bar of polycrystalline material, such as silicon, into a cold cage which can be a cold silver crucible or the like having an aperture in the bottom thereof to permit insertion of the polycrystalline feed bar. An RF coil surrounds the cold cage and melts the silicon as it reaches into the cage, the RF coil providing a temperature to the silicon material which is slightly above the melting point thereof. A rod of single crystal material, the same as the feed bar, is positioned in the melt from the top surface of the cold cage and acts as a seed crystal. The single crystal rod is then pulled upwardly from the cage while polycrystalline silicon is fed into the cage through the aperture in the bottom thereof. By continuously forcing the polycrystalline rod into the cage and pulling a rod at the top of the cage, a large single crystal can be grown while maintaining only a small melt volume. The diameter of the single crystal rod being pulled will have a relation to the upper diameter of the cold cage as well as the ratio of the feed rate of the polycrystalline bar relative to the pull rate of the single crystalline bar.

摘要翻译： 本公开涉及通过组合基座和冷坩埚技术从多晶材料生长单晶材料，以产生在商业规模上生产大的高纯度单晶的方法。 该方法包括将诸如硅的多晶材料棒放入冷笼中，该冷笼可以是在其底部具有孔的冷银坩埚等以允许多晶进料棒的插入。 RF线圈围绕冷笼并在硅到达保持架时熔化硅，RF线圈向硅材料提供略高于其熔点的温度。 与进料棒相同的单晶材料棒从冷笼的顶表面定位在熔体中并用作晶种。 然后将单晶棒从保持架向上拉，而多晶硅通过其底部的孔进入保持架。 通过将多晶棒连续地强制进入保持架并拉动保持架顶部的杆，可以生长大的单晶，同时只保持较小的熔体体积。 被拉动的单晶棒的直径将与冷笼的上直径以及多晶棒的进料速率相对于单晶棒的拉伸速率的比率有关。

公开(公告)号：US3644097A

公开(公告)日：1972-02-22

申请号：US3644097D

申请日：1968-11-13

申请人： HALDOR FREDERIK AXEL FRYDENLUN

发明人： KNUDSEN POUL E

IPC分类号： C30B13/28 ,  B01J17/10

CPC分类号： C30B13/28 ,  Y10T117/1088

摘要： Control of heat radiation from the ''''critical zone'''' adjacent the molten material in a floating-zone purification of a semiconductor monocrystal to achieve a low level of dislocations.

公开(公告)号：US3563810A

公开(公告)日：1971-02-16

申请号：US3563810D

申请日：1969-06-12

申请人： SIEMENS AG

发明人： KELLER WOLFGANG ,  KRAMER HERBERT

IPC分类号： C30B13/20 ,  C30B15/08 ,  B01J17/10

CPC分类号： C30B15/08 ,  C30B13/20 ,  Y10S117/91 ,  Y10T117/1032 ,  Y10T117/1072

摘要： METHOD OF FLOATING ZONE MELTING A VERTICALLY MOUNTED ROD AND SIMULTANEOUSLY STRETCHING THE MOLTEN ZONE FOR REDUCING THE ROD IN CROSS SECTION INCLUDES PLACING AROUND THE TOP OF A THIN CRYSTAL SEED AN INDUCTION HEATER COIL HAVING TURNS OF A DIAMETER LARGER THAN THE THICKNESS OF THE THIN CRYSTAL SEED, FORMING THE LOWER END OF A THICK ROD HAVING A DIAMETER GREATER THAN 25 MM. A GREATER THAN THE DIAMETER OF A PLURALITY OF INNER TURNS OF THE COIL BUT SMALLER THAN THE DIAMETER OF AT LEAST ONE OF THE OUTER TURNS OF THE COIL APPROXIMATELY INTO THE SHAPE OF THE MOLTEN ZONE TO BE PRODUCED BY THE COIL, CONTACTING THE LOWER END OF THE THICK ROD WITH THE TOP OF THE SEED AND HEATING THE JUNCTION THEREOF WTH THE COIL SO THAT THE TURNS OF THE COIL ARE POSITIONED VERTICALLY BENEATH THE THICK PORTION, AND THEREAFTER COMMENCING THE ZONE MELTING AND STRETCHING OPERATIONS.

公开(公告)号：US3477811A

公开(公告)日：1969-11-11

申请号：US3477811D

申请日：1966-07-11

申请人： SIEMENS AG

发明人： KELLER WOLFGANG

IPC分类号： C30B13/28 ,  C30B13/30 ,  C30B13/32 ,  C30B15/08 ,  B01J17/10 ,  B01J17/20

CPC分类号： C30B13/30 ,  C30B13/28 ,  C30B13/32 ,  C30B15/08 ,  Y10S117/901 ,  Y10S117/91 ,  Y10S117/911 ,  Y10S117/912 ,  Y10S117/917 ,  Y10T117/1072

公开(公告)号：US3454367A

公开(公告)日：1969-07-08

申请号：US3454367D

申请日：1965-10-19

申请人： SIEMENS AG

发明人： REUSCHEL KONRAD

IPC分类号： C30B13/30 ,  B01J17/10 ,  C01B33/02

CPC分类号： C30B13/30 ,  Y10S117/91 ,  Y10S117/912

公开(公告)号：US4220626A

公开(公告)日：1980-09-02

申请号：US896121

申请日：1978-04-13

申请人： Robert O. Gregory ,  Louis H. Fricke, Jr.

发明人： Robert O. Gregory ,  Louis H. Fricke, Jr.

IPC分类号： C30B13/20 ,  C30B13/30 ,  B01J17/10

CPC分类号： C30B13/20 ,  C30B13/30 ,  Y10T117/1008 ,  Y10T117/1088

摘要： Apparatus for zone refining rods of semiconductive material is disclosed including an RF induction work coil having a single turn lying in a plane generally transverse to the lengthwise axis of the rod and encircling the rod. The coil is part of an RF power oscillator circuit including a power amplifying device (e.g. a vacuum tube) having a control electrode and a power output electrode, the latter being connected through a voltage-blocking capacitance to an input node of an inductive-capacitive tank circuit. The tank circuit includes the work coil and a capacitance. One input side of the work coil is connected in a circuit to the input node capacitance being connected between the input node and the other input side of the work coil. A grounded center tap of the coil serves as a ground node of the tank circuit.The disclosure includes a circuit arrangement for supplying a signal of preselected magnitude to the control electrode for forcing the amplifying device toward desirable operating conditions.

摘要翻译： 公开了一种用于半导体材料的区域精炼棒的设备，其包括RF感应工作线圈，该RF感应工作线圈具有位于大致横向于杆的纵向轴线并围绕杆的平面的单个匝。 线圈是包括具有控制电极和功率输出电极的功率放大装置（例如，真空管）的RF功率振荡器电路的一部分，后者通过压阻电容连接到电感 - 电容的输入节点 坦克回路。 储能电路包括工作线圈和电容。 工作线圈的一个输入侧被连接到连接在工作线圈的输入节点和另一个输入侧之间的输入节点电容。 线圈的接地中心抽头用作储能电路的接地节点。 本公开包括用于向控制电极提供预选大小的信号以迫使放大装置朝向期望的操作条件的电路装置。

公开(公告)号：US4218282A

公开(公告)日：1980-08-19

申请号：US915847

申请日：1978-06-15

申请人： Akihiko Kochi

发明人： Akihiko Kochi

IPC分类号： C30B13/00 ,  B01J17/10 ,  B01J17/16

CPC分类号： C30B29/22 ,  C30B13/00 ,  C30B29/34 ,  Y10S117/902 ,  Y10S117/911 ,  Y10S117/918

摘要： Single crystals of chrysoberyl and beryl are prepared in a process in which the rods are formed of the desired composition and the rods are heated in a controlled atmosphere using infra-red rays. The infra-red rays are focussed upon a restricted portion of a rod to form a melt zone which is moved along the rod. A seed crystal of the desired type is preferably used. Fluxes are unnecessary and twinning is avoided.

摘要翻译： 在其中棒由所需组成形成的棒的过程中制备金黄色和黄绿色的单晶，并且使用红外线在受控气氛中加热棒。 红外线聚焦在杆的限制部分上以形成沿着杆移动的熔体区域。 优选使用所需类型的晶种。 助焊剂是不必要的，避免了孪晶。