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公开(公告)号：US08679251B2
公开(公告)日：2014-03-25
申请号：US13858137
申请日：2013-04-08
申请人： Siltronic AG
发明人： Piotr Filar
CPC分类号： C30B15/14 , C30B13/28 , C30B15/00 , C30B15/10 , C30B15/203 , C30B15/206 , C30B15/305 , C30B21/06 , C30B27/02 , C30B28/10 , C30B29/06 , C30B30/04 , Y10T117/1008 , Y10T117/1068
摘要： Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.
摘要翻译： 通过在坩埚中提供熔体，从熔体生长硅单晶; 在熔体上施加水平磁场; 将单一晶体和隔热层之间的气体引导到无熔融表面，并且控制气体在基本上垂直于磁感应的方向延伸的无熔融表面的区域上流动。 合适的装置具有用于保持熔体的坩埚; 围绕硅单晶的隔热罩具有下端，该下端连接到面向熔融物表面的底盖和相对于坩埚轴线的非轴对称形状，使得指向晶体与隔热罩之间的气体 使无熔融表面被迫流过基本上垂直于磁感应延伸的熔体区域。
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2.发明申请公开(公告)号：US20130220216A1
公开(公告)日：2013-08-29
申请号：US13858137
申请日：2013-04-08
申请人： Siltronic AG
发明人： Piotr Filar
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B13/28 , C30B15/00 , C30B15/10 , C30B15/203 , C30B15/206 , C30B15/305 , C30B21/06 , C30B27/02 , C30B28/10 , C30B29/06 , C30B30/04 , Y10T117/1008 , Y10T117/1068
摘要： Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.
摘要翻译： 通过在坩埚中提供熔体，从熔体生长硅单晶; 在熔体上施加水平磁场; 将单一晶体和隔热层之间的气体引导到无熔融表面，并且控制气体在基本上垂直于磁感应的方向延伸的无熔融表面的区域上流动。 合适的装置具有用于保持熔体的坩埚; 围绕硅单晶的隔热罩具有下端，该下端连接到面向熔融物表面的底盖和相对于坩埚轴线的非轴对称形状，使得指向晶体与隔热罩之间的气体 使无熔融表面被迫流过基本上垂直于磁感应延伸的熔体区域。
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公开(公告)号：US08460462B2
公开(公告)日：2013-06-11
申请号：US12765896
申请日：2010-04-23
申请人： Piotr Filar
发明人： Piotr Filar
CPC分类号： C30B15/14 , C30B13/28 , C30B15/00 , C30B15/10 , C30B15/203 , C30B15/206 , C30B15/305 , C30B21/06 , C30B27/02 , C30B28/10 , C30B29/06 , C30B30/04 , Y10T117/1008 , Y10T117/1068
摘要： Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.
摘要翻译： 通过在坩埚中提供熔体，从熔体生长硅单晶; 在熔体上施加水平磁场; 将单一晶体和隔热层之间的气体引导到无熔融表面，并且控制气体在基本上垂直于磁感应的方向延伸的无熔融表面的区域上流动。 合适的装置具有用于保持熔体的坩埚; 围绕硅单晶的隔热罩具有下端，该下端连接到面向熔融物表面的底盖和相对于坩埚轴线的非轴对称形状，使得指向晶体与隔热罩之间的气体 使无熔融表面被迫流过基本上垂直于磁感应延伸的熔体区域。
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公开(公告)号：US20090020069A1
公开(公告)日：2009-01-22
申请号：US12020382
申请日：2008-01-25
申请人： Eugene Standifer , Gisele Maxwell
发明人： Eugene Standifer , Gisele Maxwell
IPC分类号： C30B13/24
CPC分类号： C30B13/22 , C30B13/28 , C30B33/02 , Y10T117/1016
摘要： A post-growth optical afterheater system includes an appropriate choice of optical heat source for the single crystal material to be heated, a power adjustment module for controlling the optical power heating the crystal, and suitable focusing optics to focus the heating beam onto the crystal. The heat source may be a laser of appropriate wavelength or an incoherent source of sufficient power. In one embodiment, the power adjustment module is an optical attenuator, either of crossed-polarizer design or of intersecting wire grids. The focusing optics may be refractive, reflective, or catadioptric, depending on factors such as diameter, cost target, and space available in the crystal growth apparatus.
摘要翻译： 后增长光学余热器系统包括用于待加热的单晶材料的光热源的适当选择，用于控制加热晶体的光功率的功率调节模块，以及适当的聚焦光学器件将加热束聚焦到晶体上。 热源可以是具有适当波长的激光器或具有足够功率的非相干源。 在一个实施例中，功率调节模块是交叉偏振器设计或交叉线栅的光衰减器。 取决于诸如直径，成本目标和晶体生长装置中可获得的空间等因素，聚焦光学元件可以是折射的，反射的或反射折射的。
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公开(公告)号：US07102750B2
公开(公告)日：2006-09-05
申请号：US10651900
申请日：2003-08-29
申请人： Yoshio Takami
发明人： Yoshio Takami
IPC分类号： G01N21/00
CPC分类号： H01L21/02686 , C30B13/28 , G01N21/8422 , G01N2021/8477 , H01L21/2026 , H01L21/67115 , H01L21/67253 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A method of in-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. The method of in-situ monitoring of a crystallization state is characterized by irradiating simultaneously at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places.
摘要翻译： 对结晶化状态进行现场监测的方法用于激光退火处理，用于对薄膜的结晶化中的至少一种施加能量线照射，促进结晶化。 结晶状态的原位监测方法的特征在于通过用于监测的监视光同时在具有薄膜的表面和底面的至少一个的预定面积的区域中的至少多个监测位置同时照射 至少在直接或通过基板的能量线照射之前，期间和之后或之后的薄膜的结晶状态，以及测量反射光和透射光中的至少一个的强度的时间变化，来自 监视器光的表面或底面，作为与监视位置的位置有关的光强度分布。
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公开(公告)号：US20050078298A1
公开(公告)日：2005-04-14
申请号：US10651900
申请日：2003-08-29
申请人： Yoshio Takami
发明人： Yoshio Takami
CPC分类号： H01L21/02686 , C30B13/28 , G01N21/8422 , G01N2021/8477 , H01L21/2026 , H01L21/67115 , H01L21/67253 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A method of in-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. The method of in-situ monitoring of a crystallization state is characterized by irradiating simultaneously at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places.
摘要翻译： 对结晶化状态进行现场监测的方法用于激光退火处理，用于对薄膜的结晶化中的至少一种施加能量线照射，促进结晶化。 结晶状态的原位监测方法的特征在于通过用于监测的监视光同时在具有薄膜的表面和底面的至少一个的预定面积的区域中的至少多个监测位置同时照射 至少在直接或通过基板的能量线照射之前，期间和之后或之后的薄膜的结晶状态，以及测量反射光和透射光中的至少一个的强度的时间变化，来自 监视器光的表面或底面，作为与监视位置的位置有关的光强度分布。
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公开(公告)号：US5074952A
公开(公告)日：1991-12-24
申请号：US372098
申请日：1989-06-28
CPC分类号： C30B13/16 , C30B13/28 , Y10T117/1008 , Y10T117/108 , Y10T117/1088
摘要： The improved zone-melt recrystallization apparatus is comprised of a heating element having a plurality of individually controllable heating elements. The elements are heated in sequence to generate a melted zone within a semiconductor material which is translated across the material by heating then cooling adjacent heating elements to recrystallize the material.
摘要翻译： 改进的区域 - 熔融重结晶装置由具有多个可单独控制的加热元件的加热元件组成。 这些元件被依次加热以在半导体材料内产生熔融区，该熔融区通过加热然后冷却相邻的加热元件而使材料翻转过材料，从而使材料重结晶。
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公开(公告)号：US4707217A
公开(公告)日：1987-11-17
申请号：US868399
申请日：1986-05-28
申请人： Monti E. Aklufi
发明人： Monti E. Aklufi
CPC分类号： C30B13/28 , C30B13/16 , C30B13/24 , Y10S117/904
摘要： A system and techniques are disclosed for forming single crystal films with the use of energy sources that can create shaped hot zones. The energy may be from any source provided that it can be shaped, directed and can heat the film to become molten and recrystallized by liquid phase epitaxy. The hot zone created by the heat source is shaped such that the angle defined by the scanned hot zone's trailing liquid edge is smaller than the angle defined by the intersection of the crystal's slowest growth planes.
摘要翻译： 公开了一种使用能够产生成形热区的能量来形成单晶膜的系统和技术。 能量可以来自任何来源，只要其可以被成形，定向并且可以加热膜以使其熔融并通过液相外延重结晶。 由热源产生的热区被成形为使得由扫描的热区的拖尾液体边缘限定的角度小于由晶体的最慢生长平面相交的角度。
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公开(公告)号：US4201746A
公开(公告)日：1980-05-06
申请号：US806139
申请日：1977-06-13
CPC分类号： C30B13/285 , C30B13/28 , C30B13/32 , Y10S403/01 , Y10T117/1068 , Y10T117/1088
摘要： Improvements in apparatus for zone refining polycrystalline semiconductor rods to produce monocrystalline semiconductor rods are disclosed. In the apparatus, an inductive heating chamber is employed which has a longitudinal dimension independent of the length of the polycrystalline semiconductor rod to be processed. The longitudinal dimension of the induction heating chamber is limited only by considerations of the space required for the RF induction heating coil and related apparatus which must be mounted within the chamber, the viewing space required for the operator to observe the zone refining process, and the heating effect on the structures above and below the chamber. First and second gas tight bellows are provided which, respectively, surround the rod holder and the seed holder. One end of each of the first and second bellows is releasably and sealingly attached to the induction heating chamber, while the other end of each of the first and second bellows is attached to the base of the rod holder or seed holder, respectively. The base of the rod holder or seed holder incorporates a gas tight magnetic fluid seal means for providing dynamic sealant between the chamber and drive means. These bellows expand and collapse with the relative movement of the rod holder and seed holder with respect to the induction heating chamber. Moreover, with the rod holder displaced from the induction heating chamber, the first bellows may be detached from the chamber and collapsed to facilitate mounting a polycrystalline semiconductor rod to be refined in the rod holder, and when the refining process is complete and the seed holder is displaced from the chamber, the second bellows can be detached from the chamber and collapsed to facilitate the removal of the refined monocrystalline rod from the seedholder. In order to protect the lowermost bellows from molten semiconductor, a plurality of telescoping metallic cylinders are positioned within the bellows and concentric therewith.
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公开(公告)号：US3685973A
公开(公告)日：1972-08-22
申请号：US3685973D
申请日：1970-09-16
申请人： SIEMENS AG
发明人： KELLER WOLFGANG , REUSCHEL KONRAD
CPC分类号： C30B13/28
摘要： IN A METHOD OF ZONE MELTING A SEMICONDUCTOR ROD, THE ROD IS SUBSTANTIALLY VERTICALLY SUPPORTED AT ONE END BY A FIRST END HOLDER LOCATED IN THE SUBSTANTIALLY VERTICAL AXIS OF THE ROD, A SEED CRYSTAL BEING ATTACHED TO THE OTHER END OF THE ROD AND HAVING A FREE END SUPPORTED BY A SECOND END HOLDER, AND A MOLTEN ZONE IS FORMED IN THE ROD BY AN ANNULAR HEATING DEVICE SURROUNDING THE ROD AND DIVIDING IT INTO TWO ROD PORTIONS, THE ANNULAR HEATING DEVICE AND THE ROD BEING MOVED RELATIVE TO ONT ANOTHER IN THE AXIAL DIRECTION OF THE ROD FROM THE SEED CRYSTAL TO THE FIRST END HOLDER SO THAT ONE OF THE PORTIONS OF THE ROD IS SUPPLIED TO THE MELT AND THE OTHER PORTION THEREOF CRYSTALLIZES OUT OF THE MELT. THE IMPROVEMENT IN THE METHOD INCLUDES LATERALLY DISPLACING THE ANNULAR HEATING DEVICE TO A POSITION ECCENTRIC TO THE AXIS OF THE ROD BUT NEVERTHELESS STILL SURROUNDING THE ROD, AND MAINTAINING THE ECCENTRIC RELATIONSHIP OF THE ANNULAR HEATING DEVICE TO THE ROD FOR AT LEAST PART OF THE MOLTEN ZONE PASS ALONG THE ROD.
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