公开(公告)号：US20230139139A1

公开(公告)日：2023-05-04

申请号：US17914806

申请日：2021-03-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Shinichi FURUTA ,  Kazuue FUJITA

IPC: H01S5/065 ,  H01S5/34 ,  H01S5/223 ,  H01S5/024

Abstract: A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion on a side of a semiconductor substrate along a width direction of the semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the second portion on a side opposite to the semiconductor substrate is located between a surface of an active layer on a side opposite to the semiconductor substrate and a surface of the active layer on a side of the semiconductor substrate. When viewed in the width direction of the semiconductor substrate, a part of the metal layer on the first portion overlaps the active layer. The metal layer is directly formed on the first portion.

公开(公告)号：US20230130363A1

公开(公告)日：2023-04-27

申请号：US17914508

申请日：2021-03-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Shinichi FURUTA ,  Tadataka EDAMURA

IPC: H01S5/34

Abstract: A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor laminate formed on the semiconductor substrate to include a ridge portion configured to include an active layer having a quantum-cascade structure; an embedding layer including a first portion formed on a side surface of the ridge portion, and a second portion extending from an edge portion of the first portion on a side of the semiconductor substrate along a width direction of the semiconductor substrate; a metal layer formed on a top surface of the ridge portion, on the first portion, and on the second portion; and a dielectric layer disposed between the second portion and the metal layer. The dielectric layer is formed such that a part of the second portion is exposed from the dielectric layer. The metal layer is in contact with the second portion at the part.

公开(公告)号：US20230117347A1

公开(公告)日：2023-04-20

申请号：US17914456

申请日：2021-03-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Shinichi FURUTA

IPC: H01S5/024 ,  H01S5/34 ,  H01S5/223 ,  H01S5/22 ,  H01S5/343 ,  H01S5/065

Abstract: A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion along a width direction of a semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the first portion has a first inclined surface inclined with respect to the side surface to go away from the side surface as going away from the semiconductor substrate, and a second inclined surface located opposite to the semiconductor substrate with respect to the first inclined surface and inclined with respect to a center line to approach the center line as going away from the semiconductor substrate. The metal layer extends over the first inclined surface and the second inclined surface.