公开(公告)号：US20240030678A1

公开(公告)日：2024-01-25

申请号：US18033623

申请日：2021-07-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Nobutaka SUZUKI ,  Naota AKIKUSA ,  Tadataka EDAMURA

IPC: H01S5/024 ,  H01S5/34 ,  H01S5/02315

CPC classification number: H01S5/02423 ,  H01S5/3401 ,  H01S5/02315

Abstract: In a semiconductor laser device, a supply path that guides a cooling fluid supplied from a supply port side, toward a disposition region, spray holes that spray the cooling fluid guided by the supply path, from below the disposition region, and a discharge path that guides the cooling fluid sprayed from the spray holes, toward a discharge port are provided within a body portion of a heat sink. The spray holes are disposed along a resonance direction of a semiconductor laser element disposed in the disposition region, and the discharge path extends in a direction intersecting with the resonance direction of the semiconductor laser element disposed in the disposition region.

公开(公告)号：US20180254610A1

公开(公告)日：2018-09-06

申请号：US14923861

申请日：2015-10-27

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahide OCHIAI ,  Tadataka EDAMURA ,  Naota AKIKUSA

IPC: H01S5/34 ,  H01S5/024 ,  H01S5/022

CPC classification number: H01S5/3402 ,  H01S5/02208 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/0228 ,  H01S5/02288 ,  H01S5/024 ,  H01S5/02415 ,  H01S5/12 ,  H01S5/3419

Abstract: A quantum cascade laser device has a light-absorbing cover member located between one emission end face of a quantum cascade laser element and an emission window of a housing. The emission end face and an opposing surface of a submount with respect to the cover member are flush with each other. The cover member has an opening at a position opposing the emission end face. The opening has a tapered first opening part increasing its diameter from the emission end face side to the emission window side and a second opening part formed with a fixed diameter not smaller than the smallest diameter of the first opening part.

公开(公告)号：US20180248338A1

公开(公告)日：2018-08-30

申请号：US15901155

申请日：2018-02-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Tadataka EDAMURA ,  Naota AKIKUSA

IPC: H01S5/06 ,  H01S5/183 ,  H01S5/14 ,  H01S5/024 ,  H01S5/04 ,  H01S5/022 ,  H01S5/18 ,  H01S5/042

CPC classification number: H01S5/0607 ,  H01S5/0071 ,  H01S5/02212 ,  H01S5/02252 ,  H01S5/02296 ,  H01S5/02415 ,  H01S5/02469 ,  H01S5/041 ,  H01S5/0425 ,  H01S5/143 ,  H01S5/18 ,  H01S5/183 ,  H01S5/18366

Abstract: A wavelength variable light source includes a housing, a heat sink disposed in the housing, an excitation light source disposed on the heat sink and configured to output excitation light, a gain medium disposed on the heat sink and including an active layer and a lower DBR, a MEMS mechanism including a movable film facing the gain medium via a gap, disposed on the gain medium, and configured to control the gap, an upper DBR provided in the movable film and configuring a resonator together with the lower DBR, a reflector configured to reflect the excitation light output from the excitation light source toward the gain medium in the housing, and a window formed in the housing and configured to transmit light output from the gain medium.

公开(公告)号：US20180062350A1

公开(公告)日：2018-03-01

申请号：US15687637

申请日：2017-08-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Tadataka EDAMURA

IPC: H01S5/14 ,  H01S5/34 ,  H01S5/12 ,  H01S5/06

CPC classification number: H01S5/141 ,  H01S3/1055 ,  H01S5/0607 ,  H01S5/12 ,  H01S5/3401 ,  H01S2302/00

Abstract: A movable diffraction grating includes: a support portion; a movable portion swingably connected to the support portion; a coil buried in the movable portion; a magnetic field generator configured to apply a magnetic field to the coil; an insulation layer provided on a surface of the movable portion; a resin layer provided on the insulation layer and provided with a diffraction grating pattern; and a reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern.

公开(公告)号：US20240413604A1

公开(公告)日：2024-12-12

申请号：US18811057

申请日：2024-08-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Akio ITO ,  Tadataka EDAMURA

IPC: H01S5/028 ,  G02B1/113 ,  H01S5/12 ,  H01S5/16 ,  H01S5/22 ,  H01S5/34

Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.

公开(公告)号：US20230317867A1

公开(公告)日：2023-10-05

申请号：US18023435

申请日：2021-05-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuo DOUGAKIUCHI ,  Akio ITO ,  Masahiro HITAKA ,  Tadataka EDAMURA

IPC: H01L31/0352 ,  H01L23/482 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0304 ,  G01J3/10 ,  G01J3/45 ,  G01J3/457

CPC classification number: H01L31/035236 ,  H01L23/4821 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/035281 ,  H01L31/03046 ,  G01J3/10 ,  G01J3/45 ,  G01J3/457 ,  G01J2003/102

Abstract: A photodetection module includes a photodetector and a fixing member. The photodetector includes a semiconductor substrate, a mesa portion, a first contact layer, a second contact layer, and a first electrode formed in a planar shape on a major surface of the semiconductor substrate, and electrically connected to one of the first contact layer and the second contact layer. The fixing member includes an insulating substrate, and a first wiring formed in a planar shape on a major surface of the insulating substrate. A recessed portion is formed in the major surface of the insulating substrate, and at least a part of the mesa portion is disposed inside the recessed portion. The first electrode is electrically connected to the first wiring in a state where the first electrode is in surface contact with the first wiring.

公开(公告)号：US20230130363A1

公开(公告)日：2023-04-27

申请号：US17914508

申请日：2021-03-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Shinichi FURUTA ,  Tadataka EDAMURA

IPC: H01S5/34

Abstract: A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor laminate formed on the semiconductor substrate to include a ridge portion configured to include an active layer having a quantum-cascade structure; an embedding layer including a first portion formed on a side surface of the ridge portion, and a second portion extending from an edge portion of the first portion on a side of the semiconductor substrate along a width direction of the semiconductor substrate; a metal layer formed on a top surface of the ridge portion, on the first portion, and on the second portion; and a dielectric layer disposed between the second portion and the metal layer. The dielectric layer is formed such that a part of the second portion is exposed from the dielectric layer. The metal layer is in contact with the second portion at the part.

公开(公告)号：US20230030197A1

公开(公告)日：2023-02-02

申请号：US17888623

申请日：2022-08-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuo DOUGAKIUCHI ,  Akio ITO ,  Masahiro HITAKA ,  Tadataka EDAMURA ,  Naota AKIKUSA

IPC: G01N21/39 ,  H01S5/40 ,  H01S5/34 ,  G01J3/427

Abstract: A beating spectroscopy device includes: first and second quantum cascade lasers; a quantum cascade detector; and a sample holder configured to hold a sample on an optical path between the second quantum cascade laser and the quantum cascade detector. Lights from the first and second quantum cascade lasers are detected by the quantum cascade detector while a wavelength of the light from the second quantum cascade laser is changed to scan a frequency of a beating signal having a frequency in accordance with a wavelength difference between the lights from the first and second quantum cascade lasers.

公开(公告)号：US20190326466A1

公开(公告)日：2019-10-24

申请号：US16386604

申请日：2019-04-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masahiro HITAKA ,  Akio ITO ,  Tatsuo DOUGAKIUCHI ,  Kazuue FUJITA ,  Tadataka EDAMURA

IPC: H01L31/173 ,  H01S5/34 ,  H01L31/0352 ,  H01L31/0224 ,  H01S5/02 ,  H01S5/22 ,  H01S5/026 ,  H01S5/042 ,  H01S5/343 ,  H01L31/0304 ,  H01L31/18 ,  G01N21/25

Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.

公开(公告)号：US20190013647A1

公开(公告)日：2019-01-10

申请号：US16027709

申请日：2018-07-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira HIGUCHI ,  Yoshitaka KUROSAKA ,  Tadataka EDAMURA ,  Masahiro HITAKA

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/10

CPC classification number: H01S5/18394 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/105 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/3436

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.