公开(公告)号：US20170341990A1

公开(公告)日：2017-11-30

申请号：US15528828

申请日：2015-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Osamu KOMEDA ,  Takuya KONDO ,  Toshiyuki KAWASHIMA ,  Hirofumi KAN ,  Nakahiro SATOH ,  Takashi SEKINE ,  Takashi KURITA ,  Atsushi SUNAHARA ,  Tomoyoshi MOTOHIRO ,  Tatsumi HIOKI ,  Hirozumi AZUMA ,  Shigeki OHSHIMA ,  Tsutomu KAJINO ,  Yoneyoshi KITAGAWA ,  Yoshitaka MORI ,  Katsuhiro ISHII ,  Ryohei HANAYAMA ,  Yasuhiko NISHIMURA ,  Eisuke MIURA

IPC: C04B41/00 ,  C04B35/48

CPC classification number: C04B41/0045 ,  B23K26/38 ,  B23K26/402 ,  B23K2103/52 ,  C01P2002/90 ,  C04B35/48 ,  C04B41/0036 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/0025 ,  C04B2235/3248 ,  C30B13/24 ,  C30B29/16

Abstract: A problem to be solved is to provide a method for processing zirconia without producing a monoclinic crystal. The solution is a method for processing zirconia, including the step of irradiating the zirconia with a laser with a pulse duration of 10−12 seconds to 10−15 seconds at an intensity of 1013 to 1015 W/cm2.