公开(公告)号：US20030034496A1

公开(公告)日：2003-02-20

申请号：US10262859

申请日：2002-10-03

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yasuhito Yoneta ,  Hiroshi Akahori ,  Masaharu Muramatsu

IPC分类号： H01L027/15

CPC分类号： H01L31/103 ,  H01L27/14663

摘要： A photodiode array 1 includes Pnull diffusion regions 4 and 5, Nnull channel stop layers 6 and 7, an Nnull diffusion region 8 and the like. The Pnull diffusion regions 4 and 5 and the Nnull channel stop layers 6 and 7 are provided on a surface side opposite to an incident surface of a semiconductor substrate 3. The Nnull channel stop layer 6 is provided between the Pnull diffusion regions (the Pnull diffusion regions 4 and 5; the Pnull diffusion regions 4 and 4) adjacent to each other, and exhibits a form of lattice so as to separate the Pnull diffusion regions (the Pnull diffusion regions 4 and 5; the Pnull diffusion regions 4 and 4). The Nnull channel stop layer 7 is provided in the form of frame on the outside of an array of the Pnull diffusion region 5 continuously with the Nnull channel stop layer 6. The Nnull channel stop layer 7 is set wider than the Nnull channel stop layer 6. To the incident surface of the semiconductor substrate 3, a scintillator is optically connected.

摘要翻译： 光电二极管阵列1包括P +扩散区域4和5，N +沟道阻挡层6和7，N +扩散区域8等。 P +扩散区域4和5以及N +沟道阻挡层6和7设置在与半导体衬底3的入射表面相对的表面侧上.N +沟道阻挡层6设置在P +扩散区域（P +扩散区域 区域4和5; P +扩散区域4和4），并且呈现格子的形式，以分离P +扩散区域（P +扩散区域4和5; P +扩散区域4和4）。 N +通道停止层7以N +通道停止层6连续地设置在P +扩散区域5的阵列的外侧的框架形式.N +通道阻挡层7被设定为比N +沟道停止层6宽 在半导体衬底3的入射表面上，闪烁体被光学连接。