Semiconductor energy detector
    1.
    发明申请
    Semiconductor energy detector 有权
    半导体能量探测器

    公开(公告)号:US20010045577A1

    公开(公告)日:2001-11-29

    申请号:US09886110

    申请日:2001-06-22

    IPC分类号: H01L027/148 H01L029/768

    CPC分类号: H01L27/14812

    摘要: A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

    摘要翻译: 这里所公开的一种半导体能量检测器被布置成在CCD垂直移位寄存器的传输电极的正面上形成铝布线图形,该垂直移位寄存器的图形包括用于执行辅助应用/补充的曲折辅助布线和用于执行的附加布线 以与辅助布线无关的方式辅助补偿传输电压,其中相应的这些布线连接到相应的传输电极,从而避免在由多晶硅制成的那些传输电极处的引线电阻的问题,从而实现预期的电荷转移 高速高效率。

    Semiconductor energy detector
    2.
    发明申请
    Semiconductor energy detector 有权
    半导体能量探测器

    公开(公告)号:US20030034496A1

    公开(公告)日:2003-02-20

    申请号:US10262859

    申请日:2002-10-03

    IPC分类号: H01L027/15

    CPC分类号: H01L31/103 H01L27/14663

    摘要: A photodiode array 1 includes Pnull diffusion regions 4 and 5, Nnull channel stop layers 6 and 7, an Nnull diffusion region 8 and the like. The Pnull diffusion regions 4 and 5 and the Nnull channel stop layers 6 and 7 are provided on a surface side opposite to an incident surface of a semiconductor substrate 3. The Nnull channel stop layer 6 is provided between the Pnull diffusion regions (the Pnull diffusion regions 4 and 5; the Pnull diffusion regions 4 and 4) adjacent to each other, and exhibits a form of lattice so as to separate the Pnull diffusion regions (the Pnull diffusion regions 4 and 5; the Pnull diffusion regions 4 and 4). The Nnull channel stop layer 7 is provided in the form of frame on the outside of an array of the Pnull diffusion region 5 continuously with the Nnull channel stop layer 6. The Nnull channel stop layer 7 is set wider than the Nnull channel stop layer 6. To the incident surface of the semiconductor substrate 3, a scintillator is optically connected.

    摘要翻译: 光电二极管阵列1包括P +扩散区域4和5,N +沟道阻挡层6和7,N +扩散区域8等。 P +扩散区域4和5以及N +沟道阻挡层6和7设置在与半导体衬底3的入射表面相对的表面侧上.N +沟道阻挡层6设置在P +扩散区域(P +扩散区域 区域4和5; P +扩散区域4和4),并且呈现格子的形式,以分离P +扩散区域(P +扩散区域4和5; P +扩散区域4和4)。 N +通道停止层7以N +通道停止层6连续地设置在P +扩散区域5的阵列的外侧的框架形式.N +通道阻挡层7被设定为比N +沟道停止层6宽 在半导体衬底3的入射表面上,闪烁体被光学连接。

    Semiconductor energy detector
    3.
    发明申请
    Semiconductor energy detector 有权
    半导体能量探测器

    公开(公告)号:US20010025915A1

    公开(公告)日:2001-10-04

    申请号:US09845204

    申请日:2001-05-01

    IPC分类号: H01L027/00

    摘要: A substrate beam 1b is formed so as to divide a membrane f or enabling detection of an energy ray upon back illumination, thereby suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.

    摘要翻译: 形成基板光束1b,以便分隔膜f或能够在背光照射时检测能量射线,从而抑制膜的变形并防止由于变形等而在检测时散焦。 该距离被设定为从薄膜的每个区域到基板框架或基板光束足够短,从而降低基板电阻并实现高速读取操作。