公开(公告)号：US20170025552A1

公开(公告)日：2017-01-26

申请号：US15124075

申请日：2015-01-26

Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

Inventor： HEIDEMARIE SCHMIDT ,  ILONA SKORUPA ,  SLAWOMIR PRUCNAL ,  DANILO BUERGER ,  AGNIESZKA BOGUSZ ,  LAVEEN SELVARAJ

IPC: H01L29/93 ,  H01L31/09 ,  H01L31/10 ,  H01L27/115

CPC classification number: H01L29/93 ,  H01G7/025 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L28/56 ,  H01L29/8616 ,  H01L31/09 ,  H01L31/10

Abstract: A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.

Abstract translation: 电容二极管或可变电容二极管包括第一和第二电极以及在两个电极之间以接触方式设置的层结构。 该层结构在从第一电极朝向第二电极的方向上一个接一个地形成由铁电材料形成的层和由具有带电缺陷的电介质材料形成的电绝缘层。 还提供了一种用于制造电容二极管或可变电容二极管的方法，存储装置和包括电容二极管或可变电容二极管的检测器。