专利检索 ap:("HEWLETT PACKARD CO") AND inv:"JEKAT HANS J" 第 1 页

1.

发明授权
Mos integrated circuit with regions of ground potential interconnected through the semiconductor substrate 失效
标题翻译： MOS集成电路与通过半导体基板互连的接地电位区域

公开(公告)号：US3590342A

公开(公告)日：1971-06-29

申请号：US3590342D

申请日：1968-11-06

申请人： HEWLETT PACKARD CO

发明人： JEKAT HANS J

IPC分类号： H01L23/535 , H01L27/088 , H01L11/14

CPC分类号： H01L23/535 , H01L27/088 , H01L2924/0002 , Y10S148/085 , H01L2924/00

摘要： In a P-channel MOS integrated circuit each active P -type region to be operated at ground potential is connected by a conductor to an adjacent N -type region in the N-type substrate thereby interconnecting these active regions through the substrate.