公开(公告)号：US09754666B2

公开(公告)日：2017-09-05

申请号：US15111194

申请日：2014-01-31

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Brent E. Buchanan ,  Martin Foltin ,  Jeffrey A. Lucas ,  Clinton H. Parker

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2213/77

Abstract: An apparatus includes a first resistive storage element and a second resistive storage element. The first and second resistive storage elements are coupled to column lines to of a crosspoint array to form a memory cell; and a ratio of resistances of the first and second resistive storage elements indicates a stored value for the memory cell.