公开(公告)号：US20200243701A1

公开(公告)日：2020-07-30

申请号：US16260256

申请日：2019-01-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Bassem Tossoun ,  Chong Zhang ,  Xiaoge Zeng ,  Zhihong Huang ,  Raymond Beausoleil

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/107 ,  H01L31/0232

Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.

公开(公告)号：US10811549B2

公开(公告)日：2020-10-20

申请号：US16260256

申请日：2019-01-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Bassem Tossoun ,  Chong Zhang ,  Xiaoge Zeng ,  Zhihong Huang ,  Raymond Beausoleil

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/0304

Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.