公开(公告)号：US10026894B2

公开(公告)日：2018-07-17

申请号：US15512141

申请日：2014-09-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Jianhua Yang ,  Zhiyong Li ,  Minxian Zhang ,  Katy Samuels

IPC: H01L45/00 ,  B41J2/175

Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.

公开(公告)号：US20170217168A1

公开(公告)日：2017-08-03

申请号：US15328277

申请日：2014-07-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Minxian Zhang

IPC: B41J2/14 ,  H01L45/00 ,  H01L27/24 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/04541 ,  B41J2/04581 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2/17546 ,  B41J2202/13 ,  B41J2202/18 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/1233

Abstract: In an example, a printhead includes a memristor, in which the memristor may include a first electrode, a second electrode positioned in a crossed relationship with the first electrode to form a junction, and a switching element positioned at the junction between the first electrode and the second electrode, in which the switching layer includes a via formed in the switching element to reduce an area of the switching element.

公开(公告)号：US09889659B2

公开(公告)日：2018-02-13

申请号：US15328277

申请日：2014-07-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Jianhua Yang ,  Minxian Zhang

IPC: B41J2/045 ,  B41J2/14 ,  B41J2/16 ,  H01L45/00 ,  H01L27/24

CPC classification number: B41J2/1433 ,  B41J2/04541 ,  B41J2/04581 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2/17546 ,  B41J2202/13 ,  B41J2202/18 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/1233

Abstract: In an example, a printhead includes a memristor, in which the memristor may include a first electrode, a second electrode positioned in a crossed relationship with the first electrode to form a junction, and a switching element positioned at the junction between the first electrode and the second electrode, in which the switching layer includes a via formed in the switching element to reduce an area of the switching element.