公开(公告)号：US20180006045A1

公开(公告)日：2018-01-04

申请号：US15543355

申请日：2015-01-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Boon Bing Ng ,  Lui Cheat Thin ,  Reynaldo V Villavelez

IPC: H01L27/11517 ,  H01L29/788 ,  H01L29/423

CPC classification number: H01L27/11517 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/42356 ,  H01L29/66825 ,  H01L29/7881

Abstract: The present subject matter relates to an electrical programmable read only memory (EPROM) cell. The EPROM cell comprises a semiconductor substrate and a floating gate separated from the semiconductor substrate by a first dielectric layer. A control gate is capacitively coupled to the floating gate through a second dielectric layer disposed between the floating gate and the control gate. In an example, the EPROM cell further comprises a conductive gate connected to the floating gate, wherein the conductive gate is to leak charges from the floating gate in a predetermined leak time period.