公开(公告)号：US20190263125A1

公开(公告)日：2019-08-29

申请号：US16343501

申请日：2016-01-31

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Zhizhang Chen ,  Robert A Pugliese ,  Mohammed S Shaarawi

IPC: B41J2/16 ,  B33Y30/00 ,  B29C64/209 ,  B41J2/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: In some examples, to form a fluid ejection device, a thermal resistor is formed on a substrate, a nitride layer is formed over the thermal resistor, and an oxide layer is formed over the nitride layer using atomic layer deposition (ALD) at a temperature greater than 250° Celsius, where the nitride layer and the oxide layer make up a passivation layer to protect the thermal resistor.