公开(公告)号：US11498130B2

公开(公告)日：2022-11-15

申请号：US16605131

申请日：2018-03-15

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Mohammed S Shaarawi ,  James McKinnell ,  Vladek Kasperchik ,  David A Champion

IPC: B22F10/00 ,  B22F3/10 ,  B22F5/00 ,  B33Y30/00 ,  B33Y50/02 ,  B29C64/393 ,  B29C64/165 ,  B33Y70/10 ,  B22F10/14 ,  B22F10/85 ,  B22F10/64 ,  B33Y80/00 ,  B22F10/68 ,  B22F10/32 ,  B22F10/47 ,  B33Y40/00 ,  C09D11/033 ,  C09D11/38 ,  B22F1/05 ,  B33Y10/00 ,  B33Y70/00 ,  B33Y40/20 ,  B29K505/00

Abstract: In an example of a method for three-dimensional (3D) printing, build material layers are patterned to form an intermediate structure. During patterning, a binding agent is selectively applied to define a patterned intermediate part. Also during patterning, i) the binding agent and a separate agent including a gas precursor are, or ii) a combined agent including a binder and the gas precursor is, selectively applied to define a build material support structure adjacent to at least a portion of the patterned intermediate part. The intermediate structure is heated to a temperature that activates the gas precursor to create gas pockets in the build material support structure.

公开(公告)号：US20210001401A1

公开(公告)日：2021-01-07

申请号：US16605131

申请日：2018-03-15

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Mohammed S Shaarawi ,  James McKinnell ,  Vladek Kasperchik ,  David A Champion

IPC: B22F3/105 ,  B22F3/10 ,  B22F5/00 ,  B22F1/00 ,  B33Y70/00 ,  B33Y10/00 ,  B33Y40/20

Abstract: In an example of a method for three-dimensional (3D) printing, build material layers are patterned to form an intermediate structure. During patterning, a binding agent is selectively applied to define a patterned intermediate part. Also during patterning, i) the binding agent and a separate agent including a gas precursor are, or ii) a combined agent including a binder and the gas precursor is, selectively applied to define a build material support structure adjacent to at least a portion of the patterned intermediate part. The intermediate structure is heated to a temperature that activates the gas precursor to create gas pockets in the build material support structure.

公开(公告)号：US10654270B2

公开(公告)日：2020-05-19

申请号：US16094953

申请日：2016-07-12

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Zhizhang Chen ,  Mohammed S Shaarawi

IPC: B41J2/14 ,  B41J2/16

Abstract: According to an example, a printhead including a thin film passivation layer, an adhesion layer, and a fluidics layer; wherein the thin film passivation layer is an atomic layer deposition thin film layer is disclosed.

公开(公告)号：US20190217613A1

公开(公告)日：2019-07-18

申请号：US16306607

申请日：2016-09-26

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Zhizhang Chen ,  Mohammed S Shaarawi ,  Jeremy Sells

IPC: B41J2/14 ,  B41J2/16 ,  C23C16/455

CPC classification number: B41J2/14129 ,  B41J2/1601 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/11 ,  C23C4/04 ,  C23C4/134 ,  C23C16/45536

Abstract: A thin film stack can include a metal substrate having a thickness of from 200 angstroms to 5000 angstroms and a passivation barrier disposed on the metal substrate at a thickness of from 600 angstroms to 1650 angstroms. The passivation barrier can include a dielectric layer and an atomic layer deposition (ALD) layer disposed on the dielectric layer. The dielectric layer can have a thickness of from 550 to 950 angstroms. The ALD layer can have a thickness from 50 to 700 angstroms.

公开(公告)号：US20210331243A1

公开(公告)日：2021-10-28

申请号：US16490922

申请日：2018-02-28

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Mohammed S Shaarawi ,  James McKinnell ,  David A Champion ,  Vladek Kasperchik

IPC: B22F10/14 ,  B33Y10/00 ,  B33Y80/00 ,  B33Y70/00 ,  B22F10/47 ,  B33Y40/00 ,  C09D11/38 ,  C09D11/033

Abstract: In an example of a method for three-dimensional (3D) printing, build material layers are patterned to form an intermediate structure. During patterning, a binding agent is selectively applied to define: a build material support structure and a patterned intermediate part. Also during patterning, i) the binding agent and a separate agent including a gas precursor or ii) a combined agent including a binder and the gas precursor are selectively applied to define a patterned breakable connection between at least a portion of the build material support structure and at least a portion patterned intermediate part. The intermediate structure is heated to a temperature that activates the gas precursor to create gas pockets in the patterned breakable connection.

公开(公告)号：US20190152226A1

公开(公告)日：2019-05-23

申请号：US16094953

申请日：2016-07-12

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Zhizhang Chen ,  Mohammed S Shaarawi

IPC: B41J2/14 ,  B41J2/16

Abstract: According to an example, a printhead including a thin film passivation layer, an adhesion layer, and a fluidics layer; wherein the thin film passivation layer is an atomic layer deposition thin film layer is disclosed

公开(公告)号：US10894406B2

公开(公告)日：2021-01-19

申请号：US16306607

申请日：2016-09-26

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Zhizhang Chen ,  Mohammed S Shaarawi ,  Jeremy Sells

IPC: B41J2/14 ,  B41J2/16 ,  C23C4/134 ,  C23C4/04 ,  C23C16/455

Abstract: A thin film stack can include a metal substrate having a thickness of from 200 angstroms to 5000 angstroms and a passivation barrier disposed on the metal substrate at a thickness of from 600 angstroms to 1650 angstroms. The passivation barrier can include a dielectric layer and an atomic layer deposition (ALD) layer disposed on the dielectric layer. The dielectric layer can have a thickness of from 550 to 950 angstroms. The ALD layer can have a thickness from 50 to 700 angstroms.

公开(公告)号：US20190263125A1

公开(公告)日：2019-08-29

申请号：US16343501

申请日：2016-01-31

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Zhizhang Chen ,  Robert A Pugliese ,  Mohammed S Shaarawi

IPC: B41J2/16 ,  B33Y30/00 ,  B29C64/209 ,  B41J2/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: In some examples, to form a fluid ejection device, a thermal resistor is formed on a substrate, a nitride layer is formed over the thermal resistor, and an oxide layer is formed over the nitride layer using atomic layer deposition (ALD) at a temperature greater than 250° Celsius, where the nitride layer and the oxide layer make up a passivation layer to protect the thermal resistor.