公开(公告)号：US20190146026A1

公开(公告)日：2019-05-16

申请号：US16098599

申请日：2016-05-09

Applicant: Hitachi, Ltd.

Inventor： Yoshinobu KIMURA ,  Junichi SAKANO ,  Kimihisa FURUKAWA ,  Takashi OGAWA ,  Renichi YAMADA

IPC: G01R31/26 ,  G01K7/01 ,  B60L3/00 ,  H03M1/12

Abstract: A diagnostic system for a power conversion apparatus including a semiconductor device and performing a switching operation for carrying and interrupting a main current to a main current is disclosed. This system includes a trigger circuit that acquires reference time for the switching operation; and a delay time calculation circuit that acquires first time at which the main current takes a first main current set value and second time at which the main current takes a second main current set value, and that detects numerical data about a difference between the first time and the reference time and numerical data about a difference between the second time and the reference time.

公开(公告)号：US20160190020A1

公开(公告)日：2016-06-30

申请号：US14911651

申请日：2013-08-14

Applicant: HITACHI, LTD.

Inventor： Yoshinobu KIMURA ,  Natsuki TSUNO ,  Hiroya OHTA ,  Renichi YAMADA ,  Hirotaka HAMAMURA ,  Toshiyuki OHNO ,  Hiroyuki OKINO ,  Yuki MORI

IPC: H01L21/66 ,  G01R31/265

CPC classification number: H01L22/12 ,  G01R31/265 ,  H01L22/20 ,  H01L22/24

Abstract: In a semiconductor inspection method using a semiconductor inspection device, by selecting an incident energy and a negative potential and scanning an inspection surface of a wafer with primary electrons to detect secondary electrons, a first inspection image is acquired, and a macro defect, stacking faults, a basal plane dislocation and a threading dislocation contained in the first inspection image are discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance. Moreover, by selecting the incident energy and a positive potential and scanning the inspection surface of the wafer with primary electrons to detect the secondary electrons, a second inspection image is acquired, and a threading screw dislocation of a dot-shaped figure contained in the second inspection image is discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance.

Abstract translation: 在使用半导体检查装置的半导体检查方法中，通过选择入射能量和负电位并扫描具有一次电子的晶片的检查表面以检测二次电子，获得第一检查图像，并且存在宏观缺陷，堆垛层错 通过基于预先确定的二次电子的信号量的阈值的图像处理来判别包含在第一检查图像中的基底位错和穿透位错。 此外，通过选择入射能量和正电位并用一次电子扫描晶片的检查表面以检测二次电子，获得第二检查图像，并且包含在第二电极中的点状图形的螺纹螺钉脱位 基于预先确定的二次电子的信号量的阈值的图像处理来判别检查图像。