公开(公告)号：US11532484B2

公开(公告)日：2022-12-20

申请号：US16482106

申请日：2018-10-26

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Taku Iwase ,  Takao Arase ,  Satoshi Terakura ,  Hayato Watanabe ,  Masahito Mori

IPC: H01L21/3213 ,  H01L21/311 ,  H01L27/11556 ,  H01L27/11582

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.