公开(公告)号：US20140144873A1

公开(公告)日：2014-05-29

申请号：US13761235

申请日：2013-02-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Atsushi YOSHIDA ,  Naohiro YAMAMOTO ,  Makoto SUYAMA ,  Kentaro YAMADA ,  Daisuke FUJITA

IPC: G11C11/02

CPC classification number: G11C11/02 ,  H01L43/12

Abstract: A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using N2 gas; and a second step of etching the laminated films after the first step using mixed gas of N2 gas and gas containing carbon elements.

Abstract translation: 等离子体蚀刻方法使用硬掩模对具有包含磁性膜的可变层，绝缘材料的阻挡层和磁性膜的固定层的层叠膜的样品进行等离子体蚀刻，所述硬掩模至少包括 一个Ta膜和一个TiN膜。 等离子体蚀刻方法包括：使用N 2气蚀刻层叠膜的第一工序; 以及在第一步骤之后使用N 2气体和含有碳元素的气体的混合气体蚀刻层压膜的第二步骤。