公开(公告)号：US20170194561A1

公开(公告)日：2017-07-06

申请号：US15260351

申请日：2016-09-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Makoto SUYAMA ,  Naohiro YAMAMOTO ,  Masato ISHIMARU ,  Hidenori TOYOOKA ,  Norihiro HOSAKA

IPC: H01L43/12 ,  B08B7/00 ,  H01J37/32 ,  B08B9/08 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  B08B7/0035 ,  B08B9/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32651 ,  H01J37/32853 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.

公开(公告)号：US20140116985A1

公开(公告)日：2014-05-01

申请号：US13748665

申请日：2013-01-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SATAKE ,  Jun HAYAKAWA ,  Tsutomu TETSUKA ,  Takeshi SHIMADA ,  Naohiro YAMAMOTO ,  Atsushi YOSHIDA

IPC: B44C1/22

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3116 ,  G11C11/161 ,  H01F41/307 ,  H01F41/308 ,  H01J37/32192 ,  H01J37/32229 ,  H01L21/3065 ,  H01L21/31138 ,  H01L43/12

Abstract: The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Abstract translation: 本发明提供一种制造具有高绝缘层与自由层的选择比的磁阻元件的方法。 制造磁阻元件的方法包括以下步骤：准备（左图，中间图）其上设置有自由层的基板，设置在第一磁性层下的固定层，以及设置在自由层之间的绝缘层的阻挡层 层和固定层，并且通过等离子体蚀刻处理（右图）自由层，其中构成阻挡层的绝缘层包含Ta元素或Ti元素。

公开(公告)号：US20140144873A1

公开(公告)日：2014-05-29

申请号：US13761235

申请日：2013-02-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Atsushi YOSHIDA ,  Naohiro YAMAMOTO ,  Makoto SUYAMA ,  Kentaro YAMADA ,  Daisuke FUJITA

IPC: G11C11/02

CPC classification number: G11C11/02 ,  H01L43/12

Abstract: A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using N2 gas; and a second step of etching the laminated films after the first step using mixed gas of N2 gas and gas containing carbon elements.

Abstract translation: 等离子体蚀刻方法使用硬掩模对具有包含磁性膜的可变层，绝缘材料的阻挡层和磁性膜的固定层的层叠膜的样品进行等离子体蚀刻，所述硬掩模至少包括 一个Ta膜和一个TiN膜。 等离子体蚀刻方法包括：使用N 2气蚀刻层叠膜的第一工序; 以及在第一步骤之后使用N 2气体和含有碳元素的气体的混合气体蚀刻层压膜的第二步骤。