公开(公告)号：US20140151327A1

公开(公告)日：2014-06-05

申请号：US13761249

申请日：2013-02-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoshi UNE ,  Hiroaki ISHIMURA ,  Kouhei MATSUDA

IPC: B29D11/00

CPC classification number: H01L21/0276 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31138

Abstract: The present invention provides a plasma etching method with an EUV-exposed resist capable of preventing variations of device feature dimensions. The plasma etching method of the present invention is to plasma-etch a target material with a multilayer resist that serves as a mask and composed of an EUV-exposed resist, an antireflective coating, an inorganic film and an organic film. The plasma etching method includes a first step of depositing a deposition film on a surface of the EUV-exposed resist before the antireflective coating is etched, a second step of etching the deposition film deposited on the antireflective coating and the antireflective coating with a gas mixture of Cl2 gas, HBr gas and N2 gas after the first step, a third step of etching the inorganic film after the second step, and a fourth step of etching the organic film after the third step.

Abstract translation: 本发明提供了一种能够防止设备特征尺寸变化的具有EUV曝光抗蚀剂的等离子体蚀刻方法。 本发明的等离子体蚀刻方法是用作为掩模的多层抗蚀剂等离子体蚀刻目标材料，其由防紫外线抗蚀剂，抗反射涂层，无机膜和有机膜构成。 等离子体蚀刻方法包括：在抗反射涂层被蚀刻之前，在曝光抗蚀剂的抗蚀剂的表面上沉积沉积膜的第一步骤;蚀刻沉积在抗反射涂层上的沉积膜和抗反射涂层的气体混合物的第二步骤 的第一步骤后的第二步骤，在第二步骤之后蚀刻无机膜的第三步骤，以及在第三步骤之后蚀刻有机膜的第四步骤。