公开(公告)号：US20140131314A1

公开(公告)日：2014-05-15

申请号：US13761222

申请日：2013-02-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoji ANDO ,  Tetsuo ONO ,  Tatehito USUI

IPC: B05C11/00

CPC classification number: H01J37/3299 ,  H01J37/32146 ,  H01J37/32266 ,  H01J37/32972

Abstract: A plasma processing apparatus includes: a processing chamber in which plasma processing is performed; a gas feeding unit which supplied process gas into the processing chamber; a radio-frequency power source which supplies radio-frequency power that turns the process gas fed into the processing chamber to plasma; and a light detector which detects the light emitted from the plasma generated in the process chamber. The light detector includes a detecting unit which detects, during respective preset exposure times, the light emitted from the plasma that is generated due to pulse-modulated radio-frequency power, and a control unit which performs control such that the amount of the light emitted from the plasma during each of the preset exposure times becomes constant.

Abstract translation: 一种等离子体处理装置，包括：进行等离子体处理的处理室; 气体供给单元，其将处理气体供给到处理室中; 射频电源，其提供将进入处理室的处理气体转换为等离子体的射频功率; 以及光检测器，其检测从处理室中产生的等离子体发射的光。 光检测器包括：检测单元，其在相应的预设曝光时间期间检测由于脉冲调制的射频功率而产生的等离子体发射的光;以及控制单元，其执行控制，使得发射的光量 在每个预设曝光时间期间从等离子体变为恒定。