公开(公告)号：US20170092468A1

公开(公告)日：2017-03-30

申请号：US15260512

申请日：2016-09-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Masayuki SHIINA ,  Naoki YASUI ,  Tetsuo ONO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L29/66 ,  H01L21/67

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32192 ,  H01J37/32311 ,  H01J37/3244 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/66795

Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.

公开(公告)号：US20150099368A1

公开(公告)日：2015-04-09

申请号：US14447681

申请日：2014-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Ze SHEN ,  Tetsuo ONO ,  Hisao YASUNAMI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32201 ,  H01L21/02532

Abstract: In a dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film composed of the Si layers and SiGe layers alternately and repeatedly laminated, the each of the SiGe layers is plasma-etched with pulse-modulated plasma using NF3 gas.

Abstract translation: 在由Si层和SiGe层组成的层叠膜中，相对于Si层中的每一个Si层选择性地各向同性蚀刻每个SiGe层的干蚀刻方法中，每个SiGe层被等离子体蚀刻 使用NF3气体的等离子体。

公开(公告)号：US20140302682A1

公开(公告)日：2014-10-09

申请号：US13960831

申请日：2013-08-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Satoru MUTO ,  Tetsuo ONO ,  Yasuo OHGOSHI ,  Hirofumi EITOKU

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/66795

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

Abstract translation: 本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括等离子体处理室，其中等离子体处理样品，提供用于产生等离子体的第一射频电力的第一射频电源和第二无线电 其中所述等离子体处理方法包括以下步骤：通过第一脉冲对所述第一射频功率进行调制;其中，所述等离子体处理方法包括以下步骤： 并且通过逐渐控制作为等离子体处理时间的第一脉冲的占空比来控制血浆解离状态以产生期望的解离状态。

公开(公告)号：US20140131314A1

公开(公告)日：2014-05-15

申请号：US13761222

申请日：2013-02-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoji ANDO ,  Tetsuo ONO ,  Tatehito USUI

IPC: B05C11/00

CPC classification number: H01J37/3299 ,  H01J37/32146 ,  H01J37/32266 ,  H01J37/32972

Abstract: A plasma processing apparatus includes: a processing chamber in which plasma processing is performed; a gas feeding unit which supplied process gas into the processing chamber; a radio-frequency power source which supplies radio-frequency power that turns the process gas fed into the processing chamber to plasma; and a light detector which detects the light emitted from the plasma generated in the process chamber. The light detector includes a detecting unit which detects, during respective preset exposure times, the light emitted from the plasma that is generated due to pulse-modulated radio-frequency power, and a control unit which performs control such that the amount of the light emitted from the plasma during each of the preset exposure times becomes constant.

Abstract translation: 一种等离子体处理装置，包括：进行等离子体处理的处理室; 气体供给单元，其将处理气体供给到处理室中; 射频电源，其提供将进入处理室的处理气体转换为等离子体的射频功率; 以及光检测器，其检测从处理室中产生的等离子体发射的光。 光检测器包括：检测单元，其在相应的预设曝光时间期间检测由于脉冲调制的射频功率而产生的等离子体发射的光;以及控制单元，其执行控制，使得发射的光量 在每个预设曝光时间期间从等离子体变为恒定。

公开(公告)号：US20180366335A1

公开(公告)日：2018-12-20

申请号：US16111853

申请日：2018-08-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Junya TANAKA ,  Tetsuo ONO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311

Abstract: Controllability of ion bombardment on a substrate is further improved to achieve uniformity of the etched substrate across the substrate surface.A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.

公开(公告)号：US20160079073A1

公开(公告)日：2016-03-17

申请号：US14626909

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Miyako MATSUI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO ,  Tetsuo ONO ,  Kazunori SHINODA

IPC: H01L21/3065

CPC classification number: H01L21/32137 ,  B81C1/00531 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136

Abstract: A plasma processing method includes: a first step of introducing a gas having reactivity with a film to be processed disposed in advance on a top surface of a wafer into a processing chamber to form an adhesion layer on the film; a second step of expelling a part of the gas remaining in the processing chamber while supply of the gas having reactivity is stopped; a third step of introducing a rare gas into the processing chamber to form a plasma and desorbing reaction products of the adhesion layer and the film to be processed using particles and vacuum ultraviolet light in the plasma; and a fourth step of expelling the reaction products while the plasma is not formed.

Abstract translation: 等离子体处理方法包括：将预先设置的待加工膜与反应性的气体引入晶片的上表面的第一步骤，以在膜上形成粘合层; 在停止具有反应性的气体的供给的同时排出残留在处理室中的一部分气体的第二步骤; 将稀有气体引入处理室中以在等离子体中形成等离子体并使用粒子和真空紫外光解吸粘合层和待加工膜的反应产物的第三步骤; 以及在不形成等离子体时排出反应产物的第四步骤。

公开(公告)号：US20140349418A1

公开(公告)日：2014-11-27

申请号：US14452578

申请日：2014-08-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu INOUE ,  Tetsuo ONO ,  Michikazu MORIMOTO ,  Masaki FUJII ,  Masakazu MIYAJI

IPC: H01L21/3065 ,  H01L21/66 ,  H01J37/32

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/3266 ,  H01J37/32935 ,  H01J2237/2485 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/67069 ,  H01L22/26

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

Abstract translation: 一种等离子体处理方法，其中可以从低微波功率到高微波功率的宽范围内确保稳定的工艺区域。 等离子体处理方法包括通过连续放电难以制造等离子体的区域以及通过所产生的等离子体等离子体处理被处理物的区域容易地制造等离子体，其中通过脉冲放电产生等离子体，其中ON 和OFF），在ON期间产生脉冲放电的射频功率是通过连续放电促进等离子体生产的功率，并且控制脉冲放电的占空比使得无线电的平均功率 每个循环的频率功率是在难以通过连续放电产生等离子体的区域中的功率。

公开(公告)号：US20160181118A1

公开(公告)日：2016-06-23

申请号：US14851691

申请日：2015-09-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yutaka KUDOU ,  Tetsuo ONO

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/321

Abstract: A plasma processing method capable of controlling an etching rate of a SiN film and obtaining high selectivity to a SiO2 film and Si at the same time performs etch-back of a SiN film as a processing object of a film structure including a SiO2 film and the SiN film or a Si film and the SiN film on a surface of a substrate placed in a processing chamber by using inductively couple plasma formed in the processing chamber by supplying process gas including CHF3 or CF4 and O2 gas into the processing chamber inside a vacuum vessel and supplying RF power of 7-50 MHz to an induction coil surrounding an outer circumference of the processing chamber.

Abstract translation: 能够控制SiN膜的蚀刻速率并且同时获得对SiO 2膜和Si的高选择性的等离子体处理方法作为包括SiO 2膜的膜结构的处理对象的SiN膜进行蚀刻， SiN膜或Si膜，并且通过使用感应耦合在处理室中形成的等离子体将基板放置在处理室中的衬底表面上的SiN膜，通过将包括CHF 3或CF 4和O 2气体的工艺气体供应到真空容器内的处理室中 并将7-50MHz的RF功率提供给处理室外围的感应线圈。

公开(公告)号：US20150170880A1

公开(公告)日：2015-06-18

申请号：US14603187

申请日：2015-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoru MUTO ,  Tetsuo ONO ,  Yasuo OHGOSHI ,  Hirofumi EITOKU

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/66795

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

Abstract translation: 本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括等离子体处理室，其中等离子体处理样品，提供用于产生等离子体的第一射频电力的第一射频电源和第二无线电 其中所述等离子体处理方法包括以下步骤：通过第一脉冲对所述第一射频功率进行调制;其中，所述等离子体处理方法包括以下步骤： 并且通过逐渐控制作为等离子体处理时间的第一脉冲的占空比来控制血浆解离状态以产生期望的解离状态。

公开(公告)号：US20140057445A1

公开(公告)日：2014-02-27

申请号：US13743367

申请日：2013-01-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu MORIMOTO ,  Yasuo OHGOSHI ,  Yuuzou OOHIRABARU ,  Tetsuo ONO

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32706 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.

Abstract translation: 本发明提供了一种等离子体处理装置，其具有提供可以高精度地广泛控制的调频射频功率的射频电源和使用等离子体处理装置的等离子体处理方法。 等离子体处理装置包括：真空室; 用于在真空室中产生等离子体的第一射频电源; 设置在真空室中的样品保持器，其上放置样品; 以及第二射频电源，向所述检体保持器供给射频电力，其中，所述第一射频电源和所述第二射频电源中的至少一个提供时间调制的射频电力， 调制具有两个或多个不同的控制范围，并且控制范围之一是用于高精度控制的控制范围。