公开(公告)号：US3926682A

公开(公告)日：1975-12-16

申请号：US51492674

申请日：1974-10-15

Applicant: HITACHI LTD

Inventor： SHIMADA TOSHIKAZU ,  KOMATSUBARA KIICHI ,  HASEGAWA SUSUMU ,  KATO YOSHIKI

IPC: C23C14/48 ,  C23C14/58 ,  C23C26/00 ,  C30B33/00 ,  H01L21/00 ,  H01L29/00 ,  H01L21/263

CPC classification number: H01L21/00 ,  C23C14/48 ,  C23C14/58 ,  C23C26/00 ,  C30B33/00 ,  H01L29/00

Abstract: A uniformly and perfectly amorphous GaP is obtained by irradiating a GaP body with N ions of 200 KeV, at a current density of 1 Mu A/cm2, by an amount of 5 X 1015/cm2, thereby forming a disordered state of GaP in the body to a depth of about 0.5 Mu m from its surface, and heating said GaP body at 430*C which is higher than a transition temperature of GaP from the disordered state to the amorphous state and lower than a crystallization temperature of GaP, for 10 minutes within an argon gas.