High break down voltage-combined semiconductor device suitable for fabrication of voltage multiplier rectifier circuit
    1.
    发明授权
    High break down voltage-combined semiconductor device suitable for fabrication of voltage multiplier rectifier circuit 失效
    适用于制造电压多电路整流器电路的高断开电压组合半导体器件

    公开(公告)号:US3849791A

    公开(公告)日:1974-11-19

    申请号:US36736873

    申请日:1973-06-06

    Applicant: HITACHI LTD

    Abstract: A combined semiconductor device composed of a plurality of semiconductor elements each molded with an insulating material such that the semiconductor element with lead wires is coated with the insulating material down to an appropriate position of each lead wire so that the remaining part of each lead wire is exposed for connection with other circuit elements, the molded semiconductor elements being connected with each other in a bridged manner with interspaces therebetween by means of an insulating material the same as or similar to the molding material.

    Abstract translation: 一种由多个半导体元件组成的组合半导体器件,每个半导体元件都用绝缘材料模制,使得具有导线的半导体元件被覆有绝缘材料,直到每个引线的适当位置,使得每个引线的剩余部分为 暴露于与其它电路元件的连接,模制的半导体元件以桥接的方式彼此连接,其间通过与模制材料相同或相似的绝缘材料间隔其间。

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