SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20120097226A1

    公开(公告)日:2012-04-26

    申请号:US13159725

    申请日:2011-06-14

    IPC分类号: H01L31/06 H01L31/0352

    摘要: A solar cell includes a semiconductor substrate including a first conductive type, a first amorphous silicon thin film layer disposed on the semiconductor substrate and a second amorphous silicon thin film layer including a second conductive type and disposed on the first amorphous silicon thin film layer. The first amorphous silicon thin film layer includes a first intrinsic silicon thin film layer, a second intrinsic silicon thin film layer facing the semiconductor substrate while interposing the first intrinsic silicon thin film layer therebetween and a first low concentration silicon thin film layer including the second conductive type and disposed between the first intrinsic silicon thin film layer and the second intrinsic silicon thin film layer.

    摘要翻译: 太阳能电池包括:半导体衬底,包括第一导电类型,设置在半导体衬底上的第一非晶硅薄膜层和包括第二导电类型的第二非晶硅薄膜层,并设置在第一非晶硅薄膜层上。 第一非晶硅薄膜层包括第一本征硅薄膜层,面对半导体衬底的第二本征硅薄膜层,同时在其间插入第一本征硅薄膜层,以及第一低浓度硅薄膜层,其包括第二导电 并且设置在第一本征硅薄膜层和第二本征硅薄膜层之间。