公开(公告)号：US20220035235A1

公开(公告)日：2022-02-03

申请号：US17275628

申请日：2019-09-10

Applicant: HOYA CORPORATION

Inventor： Ryo OHKUBO ,  Hitoshi MAEDA ,  Keishi AKIYAMA ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/34 ,  G03F1/54 ,  C23C14/08 ,  C23C14/34 ,  H01L21/027

Abstract: Provided is a mask blank including an etching stopper film. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, featured in that the thin film includes a material containing silicon, the etching stopper film includes a material containing hafnium, aluminum, and oxygen, and a ratio by atom % of an amount of hafnium to a total amount of hafnium and aluminum in the etching stopper film is 0.86 or less.

公开(公告)号：US20230194973A1

公开(公告)日：2023-06-22

申请号：US17926962

申请日：2021-06-15

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Keishi AKIYAMA

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: Provided is a mask blank .
A transmittance adjusting film is provided on a phase shift film; the phase shift film generates a phase difference of 150 degrees or more and 210 degrees or less between an ArF excimer laser exposure light transmitted through the phase shift film and the exposure light transmitted through the air for a same distance as a thickness of the phase shift film; and a refractive index nu with respect to a wavelength of the exposure light, an extinction coefficient ku with respect to the wavelength of the exposure light, and a thickness du[nm] of the transmittance adjusting film satisfy both equations (1) and (2) given below.





d
U

≤
-17
.63
×

n
U



3

+142
.0
×

n
U



2

-364
.9
×

n
U

+315
.8









d
U

≥
-2
.805
×

k
U



3

+19
.48
×

k
U



2

-43
.58
×

k
U

+38
.11

公开(公告)号：US20240361683A1

公开(公告)日：2024-10-31

申请号：US18560659

申请日：2022-03-31

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Keishi AKIYAMA ,  Yasutaka HORIGOME

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: Provided is a mask blank comprising a phase shift film A mask blank comprises a phase shift film on a transparent substrate. The phase shift film is made of a material comprising a transition metal, silicon, and nitrogen. A ratio of the total content of nitrogen and oxygen to the content of the transition metal is 12 or more and 19 or less in an internal region, wherein the internal region excludes a neighboring region of the phase shift film at an interface with the transparent substrate and a surface layer region of the phase shift film which is located opposite the transparent substrate.

公开(公告)号：US20230097280A1

公开(公告)日：2023-03-30

申请号：US17801377

申请日：2021-03-08

Applicant: HOYA CORPORATION ,  HOYA ELECTRONICS SINGAPORE PTE. LTD.

Inventor： Osamu NOZAWA ,  Keishi AKIYAMA ,  Hok Tak Lim ,  Tham Hui Jun

IPC: G03F1/32 ,  G03F1/24 ,  G03F1/60 ,  G03F1/80

Abstract: An object is to provide a mask blank
A mask blank having a substrate and a thin film, the substrate includes two main surfaces and a side surface with a chamfered surface provided between the two main surfaces and the side surface, one main surface of the two main surfaces includes an inner region including a center of the main surface and an outer peripheral region outside of the inner region, the thin film is provided on the inner region of the main surface, the surface reflectance Rs of the outer peripheral region with respect to light of 400 nm to 700 nm wavelength is 10% or less, and provided that Rf is the surface reflectance with respect to light of 400 nm to 700 nm wavelength in one section among sections of the thin film in the range of 9 nm to 10 nm film thickness, the contrast ratio (Rf/Rs) is 3.0 or more.