公开(公告)号：US20250105027A1

公开(公告)日：2025-03-27

申请号：US18830681

申请日：2024-09-11

Applicant: HPSP Co., Ltd.

Inventor： Si Hyung LEE ,  Kunyoung LIM ,  Bin Hong MIN ,  Hyeseong YOON

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are a high pressure gaseous hydrogen oxide providing device, and a high pressure substrate processing apparatus and method using the same. The high pressure substrate processing method includes reacting a hydrogen gas and an oxygen gas, obtaining a generated hydrogen oxide having a first pressure, converting the generated hydrogen oxide into a processed gaseous hydrogen oxide having a second pressure higher than the first pressure and an atmospheric pressure, and acting the processed gaseous hydrogen oxide on a substrate to be processed in a processing area.