公开(公告)号：US20250149351A1

公开(公告)日：2025-05-08

申请号：US18832141

申请日：2023-01-10

Applicant: HPSP Co., Ltd.

Inventor： Sung Kil CHO

IPC: H01L21/67

Abstract: The present invention provides a high-pressure wafer processing using a dual high-pressure wafer method processing facility, the method comprising the steps of: disposing a wafer in a first processing chamber of a first high-pressure wafer processing module; performing a first process, which corresponds to one among high-pressure oxidation, high-pressure nitridation, high-pressure carbon doping, and high-pressure heat treatment, on the wafer in the first processing chamber; transferring the wafer to a second processing chamber of a second high-pressure wafer processing module; and performing a second process, which corresponds to another among the high-pressure oxidation, the high-pressure nitridation, the high-pressure carbon doping, and the high-pressure heat treatment, on the wafer in the second processing chamber.

公开(公告)号：US20250105003A1

公开(公告)日：2025-03-27

申请号：US18832629

申请日：2023-01-05

Applicant: HPSP Co., Ltd.

Inventor： Sung Kil CHO

IPC: H01L21/02

Abstract: The present invention provides an insulating film manufacturing method of a semiconductor process, the method comprises the steps of: placing a wafer in a processing chamber; by supplying a source gas to the processing chamber at a first pressure higher than an atmospheric pressure, forming an insulating film on the wafer as at least one of an oxidation process and a nitridation process proceeds; by supplying a purge gas to the processing chamber, purging the source gas; and, by supplying atmospheric gas to the processing chamber at a second pressure higher than atmospheric pressure, strengthening the insulation film as the heat treatment process proceeds.

公开(公告)号：US20250014928A1

公开(公告)日：2025-01-09

申请号：US18782280

申请日：2024-07-24

Applicant: HPSP Co., Ltd.

Inventor： Sung Kil CHO

IPC: H01L21/677 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/324

Abstract: The present invention provides a high-pressure wafer processing method using a dual high-pressure wafer processing facility, the method comprising the steps of: disposing a wafer in a first processing chamber of a first high-pressure wafer processing module; performing a first process, which corresponds to one among high-pressure oxidation, high-pressure nitridation, high-pressure carbon doping, and high-pressure heat treatment, on the wafer in the first processing chamber; transferring the wafer to a second processing chamber of a second high-pressure wafer processing module; and performing a second process, which corresponds to another among the high-pressure oxidation, the high-pressure nitridation, the high-pressure carbon doping, and the high-pressure heat treatment, on the wafer in the second processing chamber.

公开(公告)号：US20250054771A1

公开(公告)日：2025-02-13

申请号：US18722044

申请日：2022-12-20

Applicant: HPSP Co., Ltd.

Inventor： Sung Kil CHO

IPC: H01L21/3115

Abstract: The present invention provides a method for doping carbon in a thin film on a wafer, the method comprising the steps of: arranging a thin film-formed wafer in a processing area; supplying an atmospheric gas into the processing area to bring the pressure in the processing area to a process pressure higher than atmospheric pressure; heating the processing area to bring the temperature in the processing area to a processing temperature; and supplying a source gas containing carbon to the processing area to allow the source gas to undergo a chemical reaction with the thin film under the process pressure at the process temperature, thereby injecting the carbon into the thin film.

公开(公告)号：US20250051916A1

公开(公告)日：2025-02-13

申请号：US18913139

申请日：2024-10-11

Applicant: HPSP Co., Ltd.

Inventor： Sung Kil CHO

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/02

Abstract: The present disclosure provides a high-pressure substrate processing apparatus and a high-pressure chemical vapor deposition method for a substrate, using same, the high-pressure substrate processing apparatus comprising: a chamber having an inner space in which a substrate to be processed is accommodated; a fluid supply module which communicates with the inner space and is configured to supply a fluid to the substrate to be processed; and a first exhaust module and a second exhaust module which communicate with the inner space and are configured to exhaust the fluid through different paths, wherein the adjustment amount of the first exhaust module for the pressure in the inner space is smaller than the adjustment amount of the second exhaust module, and the first exhaust module operates only when the inner space is in a high pressure higher than atmospheric pressure.