公开(公告)号：US11117800B2

公开(公告)日：2021-09-14

申请号：US16376970

申请日：2019-04-05

Applicant: HRL Laboratories, LLC

Inventor： Deborah J. Kirby ,  Raviv Perahia ,  Hung Nguyen ,  Frederic P. Stratton ,  David T. Chang

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5783 ,  G01C21/18

Abstract: A device preferably for use in an inertial navigation system the device having a single IC wafer; a plurality of sensors bonded to bond regions on said single IC wafer, at least one of said bond regions including an opening therein in gaseous communication with a pressure chamber associated with at least one of the plurality of said sensors; and a plurality of caps encapsulating said plurality of sensors, at least one of said plurality of caps forming at least a portion of said pressure chamber. A method of making the device is also disclosed.

公开(公告)号：US10308505B1

公开(公告)日：2019-06-04

申请号：US14456808

申请日：2014-08-11

Applicant: HRL LABORATORIES LLC

Inventor： Deborah J. Kirby ,  Raviv Perahia ,  Hung Nguyen ,  Frederic P. Stratton ,  David T. Chang

IPC: B81B3/00 ,  B81C1/00 ,  G01C21/18

Abstract: A device preferably for use in an inertial navigation system the device having a single IC wafer; a plurality of sensors bonded to bond regions on said single IC wafer, at least one of said bond regions including an opening therein in gaseous communication with a pressure chamber associated with at least one of the plurality of said sensors; and a plurality of caps encapsulating said plurality of sensors, at least one of said plurality of caps forming at least a portion of said pressure chamber. A method of making the device is also disclosed.

公开(公告)号：US10141906B1

公开(公告)日：2018-11-27

申请号：US15149026

申请日：2016-05-06

Applicant: HRL LABORATORIES LLC

Inventor： David T. Chang ,  Frederic P. Stratton ,  Hung Nguyen ,  Randall L. Kubena

IPC: H03H3/02 ,  H03H9/19 ,  H03H3/007 ,  H03H9/15

Abstract: A method of fabricating a resonator includes providing a first quartz substrate, forming a metallic etch stop on a first surface of the first quartz substrate; attaching, using a temporary adhesive, the first surface of the first quartz substrate to a second quartz substrate, etching an opening for a via in a second surface of the first quartz substrate to the metallic etch stop, forming a metal electrode on the second surface of the first quartz substrate, the metal electrode penetrating the via in the first quartz substrate to make ohmic contact with the metallic etch stop, bonding the metal electrode formed on the second surface of the first quartz substrate to a pad formed on a host substrate; and dissolving the temporary adhesive to release the second quartz substrate from the first quartz substrate, wherein the first quartz substrate and the host substrate each comprise crystalline quartz.

公开(公告)号：US09985198B1

公开(公告)日：2018-05-29

申请号：US14286419

申请日：2014-05-23

Applicant: HRL LABORATORIES LLC.

Inventor： David T. Chang ,  Frederic P. Stratton ,  Hung Nguyen ,  Randall L. Kubena

IPC: H01L41/311 ,  H01L41/053 ,  H01L41/047 ,  H01L41/23 ,  H01L41/29 ,  H01L41/332

CPC classification number: H01L41/311 ,  H01L41/0475 ,  H01L41/053 ,  H01L41/23 ,  H01L41/29 ,  H01L41/332

Abstract: High-yield fabrication methods are provided for making quartz resonators having thicknesses ranging from one micrometer to several hundred micrometers and thus covering the frequency range from HF to UHF. Plasma dry etching is used to form arbitrary resonator geometries. The quartz resonator structure and the through-quartz vias are formed concurrently. The method includes bonding a quartz device wafer to a quartz handle wafer with a temporary adhesive. Mesa structures formed by plasma dry etching enable the resonators to achieve high-Q operation with energy trapping/mode confinement. A thermo-compression bond integrates the quartz resonators to a host wafer (e.g., an oscillator ASIC) to form oscillators. Silicon cap wafers are bonded over the resonators to the ASIC to provide wafer scale hermetic encapsulation of the quartz oscillators.