公开(公告)号：US20100013004A1

公开(公告)日：2010-01-21

申请号：US12174110

申请日：2008-07-16

申请人： HSIAO CHE WU ,  MING YEN LI ,  WEN LI TSAI ,  BIN SIANG TSAI

发明人： HSIAO CHE WU ,  MING YEN LI ,  WEN LI TSAI ,  BIN SIANG TSAI

IPC分类号： H01L29/78

CPC分类号： H01L29/7834 ,  H01L21/28061 ,  H01L29/1037 ,  H01L29/6659 ,  H01L29/66621

摘要： A recessed channel transistor comprises a semiconductor substrate having a trench isolation structure, a gate structure having a lower block in the semiconductor substrate and an upper block on the semiconductor substrate, two doped regions positioned at two sides of the upper block and above the lower block, and an insulation spacer positioned at a sidewall of the upper block and having a bottom end sandwiched between the upper block and the doped regions. In particular, the two doped regions serves as the source and drain regions, respectively, and the lower block of the gate structure serves as the recessed gate of the recessed channel transistor.

摘要翻译： 凹陷沟道晶体管包括具有沟槽隔离结构的半导体衬底，在半导体衬底中具有下部块的栅极结构和位于半导体衬底上的上部块，位于上部块的两侧和下部块上方的两个掺杂区域 以及位于上块的侧壁处并且具有夹在上块和掺杂区之间的底端的绝缘垫片。 特别地，两个掺杂区域分别用作源极和漏极区，并且栅极结构的下部块用作凹陷沟道晶体管的凹入栅极。