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公开(公告)号：US20120018719A1
公开(公告)日：2012-01-26
申请号：US13027554
申请日：2011-02-15
IPC分类号： H01L29/12 , H01L31/113
CPC分类号： H01L31/1013 , H01L51/0036 , H01L51/0562 , H01L51/428 , Y02E10/549
摘要： A phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap.
摘要翻译： 光电晶体管包括基板，栅极层，电介质层，有源层，源极和漏极以及光吸收层。 栅极层设置在基板的顶部，并且电介质层设置在栅极层的顶部。 有源层具有第一带隙并且设置在电介质层的顶部上，并且源极和漏极设置在有源层的顶部上。 光吸收层具有第二带隙并且被覆盖在有源层上，并且第二带隙小于第一带隙。
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公开(公告)号：US20120313084A1
公开(公告)日：2012-12-13
申请号：US13480742
申请日：2012-05-25
CPC分类号： H01L29/78696 , H01L29/78606 , H01L29/78693
摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
摘要翻译： 金属氧化物半导体晶体管包括栅极，金属氧化物有源层，栅极绝缘层，源极和漏极。 金属氧化物活性层具有第一表面和第二表面，并且第一表面面向栅极。 栅极绝缘层设置在栅极和金属氧化物有源层之间。 源极和漏极分别连接到金属氧化物活性层。 第二表面限定了源极和漏极之间的迁移率增强区域。 迁移率增强区域中的金属氧化物活性层的氧含量小于迁移率增强区域外的区域中的金属氧化物活性层的氧含量。 金属氧化物半导体晶体管具有高载流子迁移率。
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公开(公告)号：US20120112180A1
公开(公告)日：2012-05-10
申请号：US12958593
申请日：2010-12-02
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78606 , H01L29/78693
摘要： The instant disclosure relates to a metal oxide thin film transistor having a threshold voltage modification layer. The thin film transistor includes a gate electrode, a dielectric layer formed on the gate electrode, an active layer formed on the dielectric layer, a source electrode and a drain electrode disposed separately on the active layer, and a threshold voltage modulation layer formed on the active layer in direct contact with the back channel of the transistor. The threshold voltage modulation layer and the active layer have different work functions so that the threshold voltage modulation layer modulates the threshold voltage of devices and improve the performance of the transistor.
摘要翻译： 本公开涉及具有阈值电压修饰层的金属氧化物薄膜晶体管。 薄膜晶体管包括栅电极，形成在栅电极上的电介质层，形成在电介质层上的有源层，分别设置在有源层上的源电极和漏极，以及形成在栅电极上的阈值电压调制层 有源层与晶体管的背沟直接接触。 阈值电压调制层和有源层具有不同的功能，使得阈值电压调制层调制器件的阈值电压并提高晶体管的性能。
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