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公开(公告)号：US20130045567A1
公开(公告)日：2013-02-21
申请号：US13572710
申请日：2012-08-13
IPC分类号： H01L21/363
CPC分类号： H01L29/7869
摘要： Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.
摘要翻译： 本文公开了一种制造金属氧化物薄膜晶体管的方法。 该方法包括以下步骤：（a1）在基板上形成栅电极; （a2）在所述栅电极上形成栅极绝缘层; （a3）在栅极绝缘层上形成具有沟道区的金属氧化物半导体层; （a4）在所述金属氧化物半导体层上形成源电极和漏电极，其中所述源电极通过所述沟道区域露出的间隙与所述漏电极间隔开; （a5）在沟道区上形成迁移率增强层，其中迁移率增强层不与源电极和漏电极接触; 和（a6）在约200℃至350℃的温度的环境中退火金属氧化物半导体层和迁移率增强层。
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公开(公告)号：US09647138B2
公开(公告)日：2017-05-09
申请号：US13480742
申请日：2012-05-25
IPC分类号： H01L29/22 , H01L51/30 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/78606 , H01L29/78693
摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
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公开(公告)号：US20120223370A1
公开(公告)日：2012-09-06
申请号：US13114728
申请日：2011-05-24
申请人： Hsiao-Wen ZAN , Chuang-Chuang Tsai , Hsin-Fei Meng , Chun-Cheng Yeh , Ming-Zhi Dai , Chang-Hung Li
发明人： Hsiao-Wen ZAN , Chuang-Chuang Tsai , Hsin-Fei Meng , Chun-Cheng Yeh , Ming-Zhi Dai , Chang-Hung Li
CPC分类号： G01N27/4145 , B82Y15/00
摘要： A biochemical sensor and a method of manufacturing the same are disclosed. The biochemical sensor includes a substrate, a gate arranged on one side of the substrate, a gate insulating layer arranged on one side of the gate opposite to the substrate, an active layer arranged on one side of the gate insulating layer opposite to the gate, a source and a drain arranged on one side of the active layer opposite to the gate insulating layer, and a biochemical sensing layer arranged on one side of the active layer opposite to the gate insulating layer and between the source and the drain.
摘要翻译： 公开了一种生物化学传感器及其制造方法。 所述生物化学传感器包括基板，布置在所述基板的一侧上的栅极，布置在所述栅极的与所述基板相对的一侧上的栅极绝缘层，布置在所述栅极绝缘层的与所述栅极相对的一侧上的有源层， 布置在与栅极绝缘层相对的有源层的一侧上的源极和漏极，以及布置在与栅极绝缘层相对的源极和漏极之间的有源层的一侧上的生物化学感测层。
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公开(公告)号：US08927330B2
公开(公告)日：2015-01-06
申请号：US13572710
申请日：2012-08-13
IPC分类号： H01L21/363 , H01L29/786
CPC分类号： H01L29/7869
摘要： Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.
摘要翻译： 本文公开了一种制造金属氧化物薄膜晶体管的方法。 该方法包括以下步骤：（a1）在基板上形成栅电极; （a2）在所述栅电极上形成栅极绝缘层; （a3）在栅极绝缘层上形成具有沟道区的金属氧化物半导体层; （a4）在所述金属氧化物半导体层上形成源电极和漏电极，其中所述源电极通过所述沟道区域露出的间隙与所述漏电极间隔开; （a5）在沟道区上形成迁移率增强层，其中迁移率增强层不与源电极和漏电极接触; 和（a6）在约200℃至350℃的温度的环境中退火金属氧化物半导体层和迁移率增强层。
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公开(公告)号：US20120313084A1
公开(公告)日：2012-12-13
申请号：US13480742
申请日：2012-05-25
CPC分类号： H01L29/78696 , H01L29/78606 , H01L29/78693
摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
摘要翻译： 金属氧化物半导体晶体管包括栅极，金属氧化物有源层，栅极绝缘层，源极和漏极。 金属氧化物活性层具有第一表面和第二表面，并且第一表面面向栅极。 栅极绝缘层设置在栅极和金属氧化物有源层之间。 源极和漏极分别连接到金属氧化物活性层。 第二表面限定了源极和漏极之间的迁移率增强区域。 迁移率增强区域中的金属氧化物活性层的氧含量小于迁移率增强区域外的区域中的金属氧化物活性层的氧含量。 金属氧化物半导体晶体管具有高载流子迁移率。
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