公开(公告)号：US20220254877A1

公开(公告)日：2022-08-11

申请号：US17591016

申请日：2022-02-02

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Loucheng DAI ,  Chaofan SONG ,  Huiling ZUO ,  Jiang DU ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/06 ,  H01L29/739

Abstract: A semiconductor device, and a related module, circuit, and preparation method are disclosed. The device includes an N-type drift layer, a P-type base layer, N-type emitter layers, gates, a field stop layer, a P-type collector layer, and the like. The field stop layer includes a first doped region and a second doped region that are successively stacked on a surface of the N-type drift layer. A particle radius of an impurity in the first doped region is less than a particle radius of an impurity in the second doped region. Doping densities of both the first doped region and the second doped region are higher than a doping density of the N-type drift layer. According to the semiconductor device, a collector-emitter leakage current of an IGBT can be effectively reduced.