公开(公告)号：US20230411445A1

公开(公告)日：2023-12-21

申请号：US18459563

申请日：2023-09-01

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Kang WANG ,  Chaofan SONG ,  Lianghao WANG ,  Qian ZHAO ,  Loucheng DAI ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/0615 ,  H01L29/7397 ,  H01L29/66348

Abstract: A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.

公开(公告)号：US20220254907A1

公开(公告)日：2022-08-11

申请号：US17669080

申请日：2022-02-10

Applicant: Huawei Technologies Co., Ltd.

Inventor： Loucheng DAI ,  Wentao YANG ,  Huiling ZUO ,  Kang WANG ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/739 ,  H01L23/48 ,  H01L27/102

Abstract: An insulated gate bipolar field-effect transistor (IGBT) includes a semiconductor chip, a gate pin disposed around the semiconductor chip, and an emitter region and n gate regions that are disposed on the semiconductor chip, where n is an integer greater than or equal to 2; x gate regions in the n gate regions are connected to the gate pin, where x is greater than or equal to 1 and less than or equal to n; when there is a different quantity x of gate regions connected to the gate pin, the IGBT is correspondingly applicable to a scenario in which there is a different switching frequency and a different switching loss; and n−x gate regions in the n gate regions are connected to the emitter region.

公开(公告)号：US20220416063A1

公开(公告)日：2022-12-29

申请号：US17851179

申请日：2022-06-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Loucheng DAI ,  Chaofan SONG ,  Boning HUANG ,  Zhihua LIU

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66

Abstract: Embodiments of this application disclose a semiconductor device, a related chip, and a preparation method. The semiconductor device includes an N-type drift layer and an N-type field stop layer adjacent to the N-type drift layer. A density of free electrons at the N-type field stop layer is higher than a density of free electrons at the N-type drift layer. The N-type field stop layer includes first type impurity particles and second type impurity particles doped with the first type impurity particles, and a radius of the second type impurity particles is greater than a radius of the first type impurity particles. In the N-type field stop layer, an injection density of the first type impurity particles in a region adjacent to the N-type drift layer is higher than an injection density of the first type impurity particles in any other region.

公开(公告)号：US20220254877A1

公开(公告)日：2022-08-11

申请号：US17591016

申请日：2022-02-02

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Loucheng DAI ,  Chaofan SONG ,  Huiling ZUO ,  Jiang DU ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/06 ,  H01L29/739

Abstract: A semiconductor device, and a related module, circuit, and preparation method are disclosed. The device includes an N-type drift layer, a P-type base layer, N-type emitter layers, gates, a field stop layer, a P-type collector layer, and the like. The field stop layer includes a first doped region and a second doped region that are successively stacked on a surface of the N-type drift layer. A particle radius of an impurity in the first doped region is less than a particle radius of an impurity in the second doped region. Doping densities of both the first doped region and the second doped region are higher than a doping density of the N-type drift layer. According to the semiconductor device, a collector-emitter leakage current of an IGBT can be effectively reduced.