-
1.
公开(公告)号:US20210296859A1
公开(公告)日:2021-09-23
申请号:US17333289
申请日:2021-05-28
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor: Yuanbing CHENG , Jing DAI , Yinghua DONG , Sulin YANG
Abstract: A semiconductor laser, an optical transmitter component, an optical line terminal, and an optical network unit. The semiconductor laser includes a substrate, a lower waveguide layer, a lower confining layer, a central layer, an upper confining layer, a grating layer, an upper waveguide layer, and an electrode layer that are sequentially formed on the substrate. The upper confining layer, the central layer, and the lower confining layer in a filtering region form a core layer of the filtering region. The grating layer in the filtering region includes a slanted grating. Thus, a modulation chirp and dispersion of a transmitted optical pulse can be reduced.
-
公开(公告)号:US20220022137A1
公开(公告)日:2022-01-20
申请号:US17489396
申请日:2021-09-29
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Abstract: A communication method includes receiving monitoring information, where the monitoring information comprises information of a search space set corresponding to a wake-up signal (WUS); determining at least one of a monitoring periodicity of the WUS or a monitoring occasion in the monitoring periodicity based on the information of the search space set; receiving the WUS from the network device, where the WUS comprises wake-up information of at least one terminal device; and performing PDCCH monitoring based on wake-up information of the terminal device in on duration of at least one discontinuous reception DRX cycle corresponding to the WUS, where the wake-up information of at least one terminal device comprises the wake-up information of the terminal device.
-
公开(公告)号:US20210249835A1
公开(公告)日:2021-08-12
申请号:US17243656
申请日:2021-04-29
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor: Yuanbing CHENG , Heng WANG , Jing DAI , Yinghua DONG
Abstract: An embodiment of the present invention provides a photodetector chip, including a substrate, a semiconductor optical amplification section, and a photodetection section. The substrate includes a surface, the photodetection section and the semiconductor optical amplification section are arranged on the substrate, and the photodetection section is located in an optical signal output direction of the semiconductor optical amplification section. The semiconductor optical amplification section amplifies and filters an input optical signal to output an amplified and filtered optical signal to the photodetection section. The photodetection section is configured to convert the amplified and filtered optical signal into an electrical signal. The semiconductor optical amplification section includes a grating, the grating includes a first grating and a second grating that are cascaded, and the first grating is a slanted grating. The first grating and the second grating are configured to filter an optical signal entering the semiconductor optical amplification section.
-
-