公开(公告)号：US20210249835A1

公开(公告)日：2021-08-12

申请号：US17243656

申请日：2021-04-29

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Yuanbing CHENG ,  Heng WANG ,  Jing DAI ,  Yinghua DONG

IPC: H01S3/10 ,  H01S5/14 ,  G02B6/12

Abstract: An embodiment of the present invention provides a photodetector chip, including a substrate, a semiconductor optical amplification section, and a photodetection section. The substrate includes a surface, the photodetection section and the semiconductor optical amplification section are arranged on the substrate, and the photodetection section is located in an optical signal output direction of the semiconductor optical amplification section. The semiconductor optical amplification section amplifies and filters an input optical signal to output an amplified and filtered optical signal to the photodetection section. The photodetection section is configured to convert the amplified and filtered optical signal into an electrical signal. The semiconductor optical amplification section includes a grating, the grating includes a first grating and a second grating that are cascaded, and the first grating is a slanted grating. The first grating and the second grating are configured to filter an optical signal entering the semiconductor optical amplification section.

公开(公告)号：US20220239381A1

公开(公告)日：2022-07-28

申请号：US17722907

申请日：2022-04-18

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Lei JING ,  Junye JIN ,  Tianhai CHANG ,  Shengping LI ,  Yuanbing CHENG ,  Huafeng LIN

IPC: H04B10/67

Abstract: Example optical devices are described. One example optical device includes a receiver. The receiver includes a photodetector, a first amplifier, a second amplifier, and a controller, where the photodetector is coupled to the first amplifier, the first amplifier is coupled to the second amplifier, and the first amplifier and the second amplifier are separately coupled to the controller. The controller is configured to control a gain of the first amplifier and a gain of the second amplifier based on a preset arrival time of an optical signal and a gain intensity corresponding to the optical signal. The photodetector is configured to receive the optical signal and convert the optical signal into a current signal. The first amplifier is configured to convert the current signal into a first voltage signal. The second amplifier is configured to convert the first voltage signal into a second voltage signal.

公开(公告)号：US20230254044A1

公开(公告)日：2023-08-10

申请号：US18299166

申请日：2023-04-12

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Yuanbing CHENG ,  Yuanfeng MAO ,  Guangcan CHEN

IPC: H04B10/50 ,  H01S5/0683 ,  H01S5/40 ,  H01S5/00 ,  H01S5/024

CPC classification number: H04B10/503 ,  H01S5/06837 ,  H01S5/4006 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/0064

Abstract: A laser chip includes a first power detector, a first controller, an optical splitter, a polarization splitter-rotator, a bandpass filter, and a slave laser. The optical splitter includes a first, a second, and a third port. The first port is configured to receive injection light of a master laser. The second port is connected to the first power detector. The optical splitter is configured such that the injection light enters the optical splitter through the first port, and is output to the polarization splitter-rotator through the third port. The polarization splitter-rotator is configured to perform optical splitting and polarization conversion on the injection light. The polarization splitter-rotator includes a first waveguide configured to transmit TE mode injection light after the injection light is split by the polarization splitter-rotator, and a second waveguide configured to transmit TM mode injection light after the injection light is split by the polarization splitter-rotator.

公开(公告)号：US20210296859A1

公开(公告)日：2021-09-23

申请号：US17333289

申请日：2021-05-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Yuanbing CHENG ,  Jing DAI ,  Yinghua DONG ,  Sulin YANG

IPC: H01S5/12 ,  H04J14/02 ,  H01S5/34

Abstract: A semiconductor laser, an optical transmitter component, an optical line terminal, and an optical network unit. The semiconductor laser includes a substrate, a lower waveguide layer, a lower confining layer, a central layer, an upper confining layer, a grating layer, an upper waveguide layer, and an electrode layer that are sequentially formed on the substrate. The upper confining layer, the central layer, and the lower confining layer in a filtering region form a core layer of the filtering region. The grating layer in the filtering region includes a slanted grating. Thus, a modulation chirp and dispersion of a transmitted optical pulse can be reduced.