公开(公告)号：US20240323584A1

公开(公告)日：2024-09-26

申请号：US18735725

申请日：2024-06-06

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Diwen SHI ,  Chujun NI ,  Qian ZHAO ,  Tao HUANG

IPC: H04R1/10

CPC classification number: H04R1/105 ,  H04R1/1016 ,  H04R1/1091 ,  H04R2420/07

Abstract: Deformable structures, wearable devices, and wearable device usage methods are disclosed. The deformable structure may be used in the wearable device. The deformable structure includes a shape memory polymer. The shape memory polymer includes a functional group. The functional group is used to enable the shape memory polymer to change from a first state to a second state under a stimulation condition. At a first temperature, a Young's modulus of the shape memory polymer in the second state is greater than a Young's modulus of the shape memory polymer in the first state, and the first temperature is higher than a glass transition temperature of the shape memory polymer in the first state. When the deformable structure in the first state is used in the wearable device, the deformable structure may change into the second state to facilitate long-term wearing of the user.

公开(公告)号：US20230411445A1

公开(公告)日：2023-12-21

申请号：US18459563

申请日：2023-09-01

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Kang WANG ,  Chaofan SONG ,  Lianghao WANG ,  Qian ZHAO ,  Loucheng DAI ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/0615 ,  H01L29/7397 ,  H01L29/66348

Abstract: A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.

公开(公告)号：US20230198512A1

公开(公告)日：2023-06-22

申请号：US18170575

申请日：2023-02-17

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Fayou YIN ,  Boning HUANG ,  Wentao YANG ,  Quan ZHANG ,  Qian ZHAO

IPC: H03K17/0412 ,  H03K17/16

CPC classification number: H03K17/04123 ,  H03K17/162

Abstract: A driver metal-oxide-semiconductor field-effect transistor DrMOS, an integrated circuit, an electronic device, and a preparation method are provided. The DrMOS mainly includes a first die and a second die. The first die includes a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor. The second die includes a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor. The drive circuit and the first switching transistor are prepared in a same die. This helps to reduce an area, loss, and costs of the DrMOS. The first switching transistor and the second switching transistor are prepared in different dies that reduces type selection limitation.