公开(公告)号：US20230298648A1

公开(公告)日：2023-09-21

申请号：US18323702

申请日：2023-05-25

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Qing QIN ,  Xue ZHOU ,  Xi LIU

IPC: G11C11/16 ,  H10N50/10 ,  H10N50/85 ,  H01F10/32 ,  H10B61/00

CPC classification number: G11C11/161 ,  G11C11/1655 ,  H10N50/10 ,  H10N50/85 ,  H01F10/3286 ,  H10B61/20

Abstract: An example memory includes a plurality of storage units and bit lines distributed in an array in a storage area of the memory, where each of the storage unit includes a transistor and a magnetic tunnel junction (MTJ) element connected to the transistor. The MTJ element is disposed on a current transmission path between a source or a drain of the transistor and the bit line. The MTJ element includes a pinning layer, a reference layer, a tunneling layer, and a free layer that are stacked in sequence, and a magnetization direction of the pinning layer is parallel to a stacking direction of layers in the MTJ. The example memory further includes a first magnetic structure disposed on the current transmission path and in contact with the MTJ element. An included angle between a magnetization direction of the first magnetic structure and the magnetization direction of the pinning layer is (90°, 180°].