公开(公告)号：US20210288616A1

公开(公告)日：2021-09-16

申请号：US17333299

申请日：2021-05-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhixiong ZENG ,  Jie SUN ,  Hailei SUO

IPC: H03F1/02 ,  H03F3/24 ,  H03F3/60 ,  H03F1/56

Abstract: A power amplifier circuit is provided, to improve efficiency of a power amplifier. The circuit includes: a first branch, including a first amplifier and a first matching network that are cascaded; a second branch, including a second amplifier and a second matching network that are cascaded, where a first coupled line enables the first branch and the second branch to form a first combiner; a third branch, including a third amplifier and a third matching network that are cascaded; and a fourth branch, including a fourth amplifier and a fourth matching network that are cascaded, where a second coupled line enables the third branch and the fourth branch to form a second combiner. A first output end of the first coupled line is a signal output end of the circuit, and a second output end of the first coupled line is connected to a first output end of the second coupled line, to enable the first combiner and the second combiner to form a series combiner.

公开(公告)号：US20200321673A1

公开(公告)日：2020-10-08

申请号：US16908321

申请日：2020-06-22

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Jie SUN ,  Yan GAO ,  Zhixiong ZENG

IPC: H01P1/38 ,  H03F3/24 ,  H03F1/02 ,  H01P5/22 ,  H04B1/04

Abstract: Embodiments of this application disclose a signal processing circuit, a radio frequency signal transmitter, and a communications device, and relate to the field of electronic device technologies, to improve power amplification efficiency of the signal processing circuit. The signal processing circuit includes: a splitter, a radio frequency signal converter, a first branch power amplifier, a second branch power amplifier, and a combiner. The splitter is connected to the radio frequency signal converter, the radio frequency signal converter is connected to the first branch power amplifier and the second branch power amplifier, and the first branch power amplifier and the second branch power amplifier are connected to the combiner.

公开(公告)号：US20230168583A1

公开(公告)日：2023-06-01

申请号：US18162020

申请日：2023-01-31

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Yu ZHANG ,  Zhixiong ZENG ,  Huihui ZHOU

IPC: G03F7/075 ,  C08G77/04

CPC classification number: G03F7/0757 ,  C08G77/045 ,  C08G77/80

Abstract: Example patterning materials and pattern films are described. One example patterning material includes polysiloxane. The polysiloxane includes at least one cyclic structure formed by silicon-oxygen (Si—O) bond repetitions and an organic group connected to a Si atom in the at least one cyclic structure. A subset of Si atoms in the at least one cyclic structure are substituted by a metal element, and/or at least one organic group includes a halogen element.

公开(公告)号：US20220271716A1

公开(公告)日：2022-08-25

申请号：US17744033

申请日：2022-05-13

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhixiong ZENG ,  Jie SUN

IPC: H03F1/02 ,  H03F3/21 ,  H03F1/56

Abstract: The present disclosure provides example power amplifier combiner apparatuses and power amplifier circuits. One example power amplifier combiner apparatus includes a signal processing unit and n power amplifier units. The signal processing unit is separately coupled to input terminals of the n power amplifier units. Output terminals of the n power amplifier units are separately coupled to a load. When an output power of the power amplifier combiner apparatus is less than a first threshold, the signal processing unit controls a first power amplifier unit to operate. When the output power is greater than or equal to an ith threshold and is less than an (i+1)th threshold, the signal processing unit controls the first i+1 power amplifier units to operate. When the output power is not less than an (n−1)th threshold, the signal processing unit controls the n power amplifier units to operate, where i=1, . . . , or n−2.

公开(公告)号：US20220254717A1

公开(公告)日：2022-08-11

申请号：US17732120

申请日：2022-04-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Dong CHEN ,  Jie SUN ,  Zhixiong ZENG

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L49/02

Abstract: A semiconductor device and a manufacturing method therefor are provided. The semiconductor device includes a substrate and an inductor, where a shield layer may be formed between the substrate and the inductor, and the shield layer is used to shield an electrical coupling between the substrate and the inductor. In this way, a coupling current in the substrate can be reduced, an energy loss in the inductor is reduced, a quality factor of the inductor is improved, and performance of the semiconductor device is improved.

公开(公告)号：US20210328619A1

公开(公告)日：2021-10-21

申请号：US17360639

申请日：2021-06-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Jie SUN ,  Zhixiong ZENG

IPC: H04B1/44 ,  H04B1/04

Abstract: The present disclosure discloses example transmission/reception separation circuits and transceiver. One example transmission/reception separation circuit includes a transmission amplification circuit, an impedance adjustment circuit, and a reception amplification circuit. An output end of the transmission amplification circuit is connected to the impedance adjustment circuit. The impedance adjustment circuit is further connected to an input end of the reception amplification circuit. The second end of the impedance adjustment circuit and the input end of the reception amplification circuit are further configured to be connected to an antenna. The transmission amplification circuit amplifies a first signal to be transmitted. The reception amplification circuit amplifies a second signal received. When the antenna transmits the amplified first signal, a first impedance is in a high impedance state. The impedance adjustment circuit adjusts a second impedance to a high impedance state when the antenna receives the second signal.