READ AND WRITE CIRCUIT OF THREE-DIMENSIONAL PHASE-CHANGE MEMORY

    公开(公告)号:US20220383951A1

    公开(公告)日:2022-12-01

    申请号:US17873186

    申请日:2022-07-26

    Abstract: A read and write circuit of a three-dimensional phase-change memory including an operation control circuit and a read and write operation circuit connected to each other. The operation control circuit is configured to load a correct operation pulse onto the read and write operation circuit. A read and write unit in the read and write operation circuit is connected to a memory cell and is configured to load the correct operation pulse onto the memory cell corresponding to the three-dimensional phase-change memory and to mirror the correct operation pulse to a mirror current. A bandgap reference source and a hysteresis comparator are connected to a mirror circuit branch. A feedback chopper circuit loop is connected across the memory cell and the mirror circuit branch and is configured to monitor a current flowing through the memory cell in real time.

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