DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS AND PREPARATION METHOD THEREOF
    1.
    发明申请
    DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS AND PREPARATION METHOD THEREOF 有权
    用于半导体工艺的干式气体及其制备方法

    公开(公告)号:US20070265478A1

    公开(公告)日:2007-11-15

    申请号:US11535035

    申请日:2006-09-25

    IPC分类号: C07C17/20

    摘要: The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.

    摘要翻译: 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。

    DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS
    2.
    发明申请
    DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS 审中-公开
    用于半导体工艺的干蚀气体

    公开(公告)号:US20080203353A1

    公开(公告)日:2008-08-28

    申请号:US12013975

    申请日:2008-01-14

    IPC分类号: C09K13/00

    摘要: The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.

    摘要翻译: 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。

    Dry-etching gas for semiconductor process and preparation method thereof
    3.
    发明授权
    Dry-etching gas for semiconductor process and preparation method thereof 有权
    用于半导体工艺的干蚀刻气体及其制备方法

    公开(公告)号:US07319174B2

    公开(公告)日:2008-01-15

    申请号:US11535035

    申请日:2006-09-25

    IPC分类号: C07C17/20 C09K13/00

    摘要: The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.

    摘要翻译: 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。

    Method of producing difluoromethane
    4.
    发明授权
    Method of producing difluoromethane 失效
    生产二氟甲烷的方法

    公开(公告)号:US06841705B2

    公开(公告)日:2005-01-11

    申请号:US10372430

    申请日:2003-02-24

    IPC分类号: C07C17/20 C07C19/08 C07C17/00

    摘要: A method of producing difluoromethane (HFC-32), which includes firstly reacting methylene chloride with hydrogen fluoride in gas phase at 280 to 340° C. in the presence of a fluorination catalyst to produce chlorofluoro methane, and secondly reacting the chlorofluoro methane with hydrogen fluoride in liquid phase at 60 to 80° C. in the presence of an antimony chloride catalyst. The method is advantageous in that HFC-32 is produced in high yield under mild reaction conditions using a relatively small amount of energy.

    摘要翻译: 一种生产二氟甲烷(HFC-32)的方法,其包括在氟化催化剂的存在下,首先使二氯甲烷与氟化氢在气相中在280〜340℃下反应,生成氯氟甲烷,其次使氯氟甲烷与氢气反应 氟化物在液相中在60至80℃下在氯化锑催化剂存在下进行。 该方法的优点在于,在温和的反应条件下使用相对少量的能量可以高产率生产HFC-32。