Fuel Cell Gas Diffusion Layer Integrated Gasket
    1.
    发明申请
    Fuel Cell Gas Diffusion Layer Integrated Gasket 有权
    燃料电池气体扩散层集成垫片

    公开(公告)号:US20110014540A1

    公开(公告)日:2011-01-20

    申请号:US12821866

    申请日:2010-06-23

    IPC分类号: H01M8/10

    摘要: To improve assembly precision of a fuel cell by improving a sealing property. A first gasket 12 is integrally formed with a first gas diffusion layer 11 and a second gasket 14 is integrally formed with a second gas diffusion layer 13, and a hinge portion 15 connects the first gasket 12 to the second gasket 14. The gas diffusion layer incorporated gasket sandwiches a membrane-electrode from both sides in the thickness direction. A seal protrusion 12c is formed in a surface of the first gasket 12 or the second gasket 14 and comes into close contact with the membrane-electrode.

    摘要翻译: 通过提高密封性能来提高燃料电池的组装精度。 第一垫圈12与第一气体扩散层11一体形成,第二衬垫14与第二气体扩散层13一体形成,铰链部分15将第一衬垫12连接到第二衬垫14上。气体扩散层 引入衬垫在厚度方向上从两侧三明治膜电极。 密封突起12c形成在第一垫圈12或第二垫圈14的表面中并与膜电极紧密接触。

    Fuel Cell Gas Diffusion Layer Integrated Gasket
    2.
    发明申请
    Fuel Cell Gas Diffusion Layer Integrated Gasket 有权
    燃料电池气体扩散层集成垫片

    公开(公告)号:US20110014541A1

    公开(公告)日:2011-01-20

    申请号:US12821992

    申请日:2010-06-23

    IPC分类号: H01M8/10

    摘要: A gas diffusion layer-integrated gasket 1 includes a first gasket 12 which is integrally molded to a periphery of a first gas diffusion layer 11 and a second gasket 14 which is integrally molded to a periphery of a second gas diffusion layer 13, and a hinge part 15 which connects the first gasket 12 and second gasket 14 to each other. The first and second gas diffusion layers sandwich a membrane-electrode assembly 2 in which catalytic electrode layers are provided on both surfaces of an electrolytic membrane from both sides, wherein a seal protrusion 12c is formed on a surface which is in tight contact with the membrane-electrode assembly 2.

    摘要翻译: 气体扩散层一体化衬垫1包括一体成型为第一气体扩散层11的周边的第一衬垫12和与第二气体扩散层13的周边一体成型的第二衬垫14,以及铰链 将第一垫片12和第二垫圈14彼此连接的部分15。 第一气体扩散层和第二气体扩散层夹着膜电极接合体2,其中从两侧在电解质膜的两个表面上设置催化剂电极层,其中在与膜紧密接触的表面上形成有密封突起12c 电极组件2。

    Fuel cell gas diffusion layer integrated gasket
    3.
    发明授权
    Fuel cell gas diffusion layer integrated gasket 有权
    燃料电池气体扩散层集成垫片

    公开(公告)号:US09196911B2

    公开(公告)日:2015-11-24

    申请号:US12821992

    申请日:2010-06-23

    IPC分类号: H01M8/02 H01M8/10

    摘要: A gas diffusion layer-integrated gasket 1 includes a first gasket 12 which is integrally molded to a periphery of a first gas diffusion layer 11 and a second gasket 14 which is integrally molded to a periphery of a second gas diffusion layer 13, and a hinge part 15 which connects the first gasket 12 and second gasket 14 to each other. The first and second gas diffusion layers sandwich a membrane-electrode assembly 2 in which catalytic electrode layers are provided on both surfaces of an electrolytic membrane from both sides, wherein a seal protrusion 12c is formed on a surface which is in tight contact with the membrane-electrode assembly 2.

    摘要翻译: 气体扩散层一体化衬垫1包括一体成型为第一气体扩散层11的周边的第一衬垫12和与第二气体扩散层13的周边一体成型的第二衬垫14,以及铰链 将第一垫片12和第二垫圈14彼此连接的部分15。 第一气体扩散层和第二气体扩散层夹着膜电极接合体2,其中从两侧在电解质膜的两个表面上设置催化剂电极层,其中在与膜紧密接触的表面上形成有密封突起12c 电极组件2。

    Fuel cell gas diffusion layer integrated gasket
    4.
    发明授权
    Fuel cell gas diffusion layer integrated gasket 有权
    燃料电池气体扩散层集成垫片

    公开(公告)号:US09350034B2

    公开(公告)日:2016-05-24

    申请号:US12821866

    申请日:2010-06-23

    IPC分类号: H01M8/10 H01M8/02

    摘要: To improve assembly precision of a fuel cell by improving a sealing property. A first gasket 12 is integrally formed with a first gas diffusion layer 11 and a second gasket 14 is integrally formed with a second gas diffusion layer 13, and a hinge portion 15 connects the first gasket 12 to the second gasket 14. The gas diffusion layer incorporated gasket sandwiches a membrane-electrode from both sides in the thickness direction. A seal protrusion 12c is formed in a surface of the first gasket 12 or the second gasket 14 and comes into close contact with the membrane-electrode.

    摘要翻译: 通过提高密封性能来提高燃料电池的组装精度。 第一垫圈12与第一气体扩散层11一体形成,第二衬垫14与第二气体扩散层13一体形成,铰链部分15将第一衬垫12连接到第二衬垫14上。气体扩散层 引入衬垫在厚度方向上从两侧三明治膜电极。 密封突起12c形成在第一垫圈12或第二垫圈14的表面中并与膜电极紧密接触。

    Method for fabricating semiconductor device
    5.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07662699B2

    公开(公告)日:2010-02-16

    申请号:US12094601

    申请日:2005-11-24

    IPC分类号: H01L21/00

    摘要: An object is to provide a technology capable of improving a manufacturing yield of semiconductor devices by preventing scattering of irregular-shaped scraps formed at the time of dicing. To achieve the above object, for dicing lines, by which an irregular-shaped outer periphery may possibly be cut off, among a plurality of dicing lines, formation of the dicing lines starts from an outside of a semiconductor wafer, and after the semiconductor wafer is cut off partway, formation of the dicing lines is ended before reaching the irregular-shaped outer periphery formed on a outer periphery of the semiconductor wafer. For other dicing lines, formation of the dicing lines starts from the outside of the semiconductor wafer, and after the semiconductor wafer is cut off, is ended outside the semiconductor wafer.

    摘要翻译: 本发明的目的是提供一种能够通过防止在切割时形成的不规则形状的废料的散射来提高半导体器件的制造成品率的技术。 为了实现上述目的,对于在多个切割线中可能切断不规则形状的外周的切割线,切割线的形成从半导体晶片的外部开始,并且在半导体晶片之后 中间切断,切割线的形成在到达形成在半导体晶片的外周上的不规则形状的外周边之前结束。 对于其他切割线,切割线的形成从半导体晶片的外部开始,并且在半导体晶片被切断之后,在半导体晶片外部结束。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20090162993A1

    公开(公告)日:2009-06-25

    申请号:US12094601

    申请日:2005-11-24

    IPC分类号: H01L21/78

    摘要: An object is to provide a technology capable of improving a manufacturing yield of semiconductor devices by preventing scattering of irregular-shaped scraps formed at the time of dicing. To achieve the above object, for dicing lines, by which an irregular-shaped outer periphery may possibly be cut off, among a plurality of dicing lines, formation of the dicing lines starts from an outside of a semiconductor wafer, and after the semiconductor wafer is cut off partway, formation of the dicing lines is ended before reaching the irregular-shaped outer periphery formed on a outer periphery of the semiconductor wafer. For other dicing lines, formation of the dicing lines starts from the outside of the semiconductor wafer, and after the semiconductor wafer is cut off, is ended outside the semiconductor wafer.

    摘要翻译: 本发明的目的是提供一种能够通过防止在切割时形成的不规则形状的废料的散射来提高半导体器件的制造成品率的技术。 为了实现上述目的,对于在多个切割线中可能切断不规则形状的外周的切割线,切割线的形成从半导体晶片的外部开始,并且在半导体晶片之后 中间切断,切割线的形成在到达形成在半导体晶片的外周上的不规则形状的外周边之前结束。 对于其他切割线,切割线的形成从半导体晶片的外部开始,并且在半导体晶片被切断之后,在半导体晶片外部结束。