公开(公告)号：US08257912B2

公开(公告)日：2012-09-04

申请号：US12375945

申请日：2007-07-31

申请人： Hans Kwinten ,  Peter Zandbergen ,  David Van Steenwinckel ,  Anja Vanleenhove

发明人： Hans Kwinten ,  Peter Zandbergen ,  David Van Steenwinckel ,  Anja Vanleenhove

IPC分类号： G03F7/26

CPC分类号： G03F7/38

摘要： The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist on the substrate, performing a first exposure in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation. The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.

摘要翻译： 本发明涉及一种光刻方法，包括以下步骤：提供衬底并在衬底上形成光致抗蚀剂层，进行第一曝光，其中光刻胶层的预定部分通过具有图案的掩模照射 在光致抗蚀剂层中形成所述图案的潜像，在执行定影之前对光致抗蚀剂层进行预处理以去除潜像的预定部分。 该方法提供了一个改进的过程窗口。 本发明还涉及在本发明的方法中使用的光致抗蚀剂。