Photolithography
    1.
    发明授权
    Photolithography 有权
    光刻

    公开(公告)号:US08257912B2

    公开(公告)日:2012-09-04

    申请号:US12375945

    申请日:2007-07-31

    IPC分类号: G03F7/26

    CPC分类号: G03F7/38

    摘要: The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist on the substrate, performing a first exposure in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation. The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.

    摘要翻译: 本发明涉及一种光刻方法,包括以下步骤:提供衬底并在衬底上形成光致抗蚀剂层,进行第一曝光,其中光刻胶层的预定部分通过具有图案的掩模照射 在光致抗蚀剂层中形成所述图案的潜像,在执行定影之前对光致抗蚀剂层进行预处理以去除潜像的预定部分。 该方法提供了一个改进的过程窗口。 本发明还涉及在本发明的方法中使用的光致抗蚀剂。

    Removable pellicle for immersion lithography
    2.
    发明授权
    Removable pellicle for immersion lithography 有权
    浸没光刻用可拆卸防护薄膜

    公开(公告)号:US08067147B2

    公开(公告)日:2011-11-29

    申请号:US10596647

    申请日:2004-12-22

    IPC分类号: G03F7/00

    CPC分类号: G03F7/70341 G03F7/70983

    摘要: A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

    摘要翻译: 一种照射方法来照射浸没在流体(L3)中的抗蚀剂(L2)的感光层,包括施加可去除的透明层(L4,L5),通过浸没流体将辐射投射到抗蚀剂上,并通过透明 使得流体中的缺陷如投射在表面上而失焦,随后去除透明层。 透明层可以帮助将这种缺陷从辐射的焦点远离在表面上,因此可以减少或消除阴影。 因此,照射可以更完整,并且缺陷减少。 对于浸入液体中的小气泡或颗粒形式的缺陷,特别是在流体/表面界面处的缺陷可能特别有效。 辐射可以用于任何目的,包括检查,加工,图案化等。 可以将透明层的去除与显影抗蚀剂层的步骤组合。

    Lithographic method
    3.
    发明授权
    Lithographic method 有权
    平版印刷法

    公开(公告)号:US07989155B2

    公开(公告)日:2011-08-02

    申请号:US12065930

    申请日:2006-09-05

    IPC分类号: G03F7/40 G03F7/38

    CPC分类号: G03F7/0392 G03F7/0382

    摘要: The present invention provides a method of lithographic patterning. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.

    摘要翻译: 本发明提供一种平版印刷图案化方法。 该方法包括:向待图案化的表面施加包含聚合物树脂的光致抗蚀剂(18),在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 通过掩模图案(12)将光致抗蚀剂(18)暴露于光化辐射; 进行曝光后烘烤; 然后用显影剂显影光致抗蚀剂(18)以除去已经溶解在显影剂中的一部分光致抗蚀剂。 聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂,并且通过催化剂的作用并且通过猝灭剂在烘烤期间的作用而使其溶解在显影剂中,或者聚合物树脂可溶于显影剂前 暴露于光化辐射并且通过催化剂的作用基本上不溶于显影剂,并且通过在烘烤期间猝灭剂的作用。

    Removable pellicle for immersion lithography
    4.
    发明申请
    Removable pellicle for immersion lithography 有权
    浸没光刻用可拆卸防护薄膜

    公开(公告)号:US20070064215A1

    公开(公告)日:2007-03-22

    申请号:US10596647

    申请日:2004-12-22

    IPC分类号: G03B27/32

    CPC分类号: G03F7/70341 G03F7/70983

    摘要: A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

    摘要翻译: 一种照射方法来照射浸入流体(L 3)中的抗蚀剂(L 2)等感光层,包括涂敷可移除的透明层(L 4,L 5),通过浸渍流体将辐射投射到抗蚀剂上 并且通过透明层,使得流体中的缺陷如投影在表面上而失焦,并随后去除透明层。 透明层可以帮助将这种缺陷从辐射的焦点远离在表面上,因此可以减少或消除阴影。 因此,照射可以更完整,并且缺陷减少。 对于浸入液体中的小气泡或颗粒形式的缺陷,特别是在流体/表面界面处的缺陷可能特别有效。 辐射可以用于任何目的,包括检查,加工,图案化等。 可以将透明层的去除与显影抗蚀剂层的步骤组合。

    Lithographic method
    5.
    发明授权
    Lithographic method 有权
    平版印刷法

    公开(公告)号:US07897324B2

    公开(公告)日:2011-03-01

    申请号:US12065926

    申请日:2006-09-05

    IPC分类号: G03F7/40 G03F1/00

    CPC分类号: G03F7/0392

    摘要: The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.

    摘要翻译: 本发明提供了一种平版印刷图案化方法,以便图案化光致抗蚀剂的强度。 该方法包括:向待图案化的表面施加包含聚合物树脂的光致抗蚀剂(18),在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 以及通过掩模图案(12)将光致抗蚀剂(18)暴露于光化辐射。 接下来,按照任何顺序,通过进行曝光后烘烤; 以及用显影剂显影光致抗蚀剂(18)以去除已经暴露于光化辐射的光致抗蚀剂的一部分。 聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂,并通过催化剂的作用使其溶解在显影剂中,并且其中聚合物树脂在烘烤期间通过猝灭剂的作用而交联。

    Lithographic Method
    6.
    发明申请
    Lithographic Method 有权
    平版方法

    公开(公告)号:US20080131820A1

    公开(公告)日:2008-06-05

    申请号:US11720315

    申请日:2005-11-10

    IPC分类号: G03F7/40

    CPC分类号: G03F7/30 G03F7/095 G03F7/32

    摘要: A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p1) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p2) half that of the optical period (p1). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p2) half that of the optical period (p1).

    摘要翻译: 描述了实现倍频光刻图案的方法。 使用具有第一周期(p <1> 1)的光学图案(16)来曝光基底(20)上的常规酸催化的光致抗蚀剂(18),留下高曝光区域(24) 低曝光(26)和中间区域(22)。 处理进行离开区域(24),其接收高暴露非常极性,即亲水性低暴露非极性(即疏水性)的区域(26),并且具有中等极性的中间区域。 然后使用显影剂丙二醇甲基醚乙酸酯仅溶解中间区域(22),使光致抗蚀剂图案化成具有光学周期(p <1> / SUB>)。 或者,光致抗蚀剂从非极性区域和极性区域移除,仅再次以中间区域(22)的光学周期(p <1/2)的相同间距(p <2> 2) SUB>)。

    Method of monitoring a photolithographic process through utilization of
fractional radiant energy test pattern
    7.
    发明授权
    Method of monitoring a photolithographic process through utilization of fractional radiant energy test pattern 失效
    通过利用分数辐射能测试模式监测光刻工艺的方法

    公开(公告)号:US5866283A

    公开(公告)日:1999-02-02

    申请号:US929537

    申请日:1997-09-15

    IPC分类号: G03F7/20 H01L21/027 G03F9/00

    摘要: A method of monitoring a photolithographic process whereby a test pattern (4) is imaged a number of times side by side with the same radiant energy on a photoresist layer (1) provided on a surface (2) of a substrate (3), but in a series of different irradiation times, after which the photoresist is developed. The irradiation dose or "energy-to-clear" with which the photoresist becomes just soluble in developer can thus be ascertained. The radiant energy with which the test pattern is imaged on the photoresist is only a fraction here of the radiant energy available in the process itself for imaging patterns on photoresist which is to be monitored. The method is thus suitable for monitoring a photolithographic process in which pulsed laser radiation is used for the pattern irradiation. The energy-to-clear can be accurately determined also in these processes.

    摘要翻译: 一种监测光刻工艺的方法,其中测试图案(4)在设置在基板(3)的表面(2)上的光致抗蚀剂层(1)上以相同的辐射能并排成像多次,但是 在一系列不同的照射时间之后,光致抗蚀剂被显影。 因此可以确定光致抗蚀剂刚刚溶于显影剂中的照射剂量或“能量到澄清”。 测试图案在光致抗蚀剂上成像的辐射能量仅在该过程本身中可用的辐射能的一部分,用于对待监测的光致抗蚀剂上的图案进行成像。 因此,该方法适用于监测其中脉冲激光辐射用于图案照射的光刻工艺。 在这些过程中也可以准确地确定能量清除。

    METHODS AND DEVICES FOR CHARACTERIZING POLARIZATION OF ILLUMINATION SYSTEM
    8.
    发明申请
    METHODS AND DEVICES FOR CHARACTERIZING POLARIZATION OF ILLUMINATION SYSTEM 审中-公开
    用于表征照明系统极化的方法和装置

    公开(公告)号:US20100215273A1

    公开(公告)日:2010-08-26

    申请号:US11993063

    申请日:2006-06-20

    IPC分类号: G06K9/46

    摘要: In a method for evaluating the polarization state of an illumination system (52) in an optical system (50), a mask (56) is provided in the optical system (50) such that an illumination beam incident on the mask (56) is adapted such as to substantially differently diffract incident components of a light beam having different polarization states. An image of the mask (56) is then obtained, using an illumination beam of the illumination system (52) of the optical system (50). The obtained image, being either an intensity plot or a structure created in a resist layer by exposing the resist layer with the image of the mask (56), is then used to extract polarization related information about the illumination system (52). The image used for evaluating may be a diffraction image of the mask.

    摘要翻译: 在用于评估光学系统(50)中的照明系统(52)的偏振状态的方法中,在光学系统(50)中设置掩模(56),使得入射在掩模(56)上的照明光束是 适于使得具有不同极化状态的光束的入射分量基本不同的衍射。 然后使用光学系统(50)的照明系统(52)的照明光束获得掩模(56)的图像。 所获得的图像是强度图或通过用掩模(56)的图像曝光抗蚀剂层在抗蚀剂层中产生的结构,然后用于提取关于照明系统(52)的偏振相关信息。 用于评估的图像可以是掩模的衍射图像。

    Lithographic Method
    9.
    发明申请
    Lithographic Method 有权
    平版方法

    公开(公告)号:US20080241764A1

    公开(公告)日:2008-10-02

    申请号:US12065926

    申请日:2006-09-05

    IPC分类号: G03F7/20

    CPC分类号: G03F7/0392

    摘要: The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.

    摘要翻译: 本发明提供了一种平版印刷图案化方法,以便图案化光致抗蚀剂的强度。 该方法包括:向待图案化的表面施加包含聚合物树脂的光致抗蚀剂(18),在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 以及通过掩模图案(12)将光致抗蚀剂(18)暴露于光化辐射。 接下来,按照任何顺序,通过进行曝光后烘烤; 以及用显影剂显影光致抗蚀剂(18)以去除已经暴露于光化辐射的光致抗蚀剂的一部分。 聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂,并通过催化剂的作用使其溶解在显影剂中,并且其中聚合物树脂在烘烤期间通过猝灭剂的作用而交联。

    Lithographic method
    10.
    发明授权
    Lithographic method 有权
    平版印刷法

    公开(公告)号:US07897323B2

    公开(公告)日:2011-03-01

    申请号:US11720315

    申请日:2005-11-10

    IPC分类号: G03F7/26

    CPC分类号: G03F7/30 G03F7/095 G03F7/32

    摘要: A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p1) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p2) half that of the optical period (p1). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p2) half that of the optical period (p1).

    摘要翻译: 描述了实现倍频光刻图案的方法。 使用具有第一周期(p1)的光学图案(16)来暴露基底(20)上的常规酸催化光致抗蚀剂(18),留下高曝光区域(24),低曝光区域(26)和中间区域 (22)。 处理进行离开区域(24),其接收高暴露非常极性,即亲水性低暴露非极性(即疏水性)的区域(26),并且具有中等极性的中间区域。 然后使用中等极性的显影剂,例如丙二醇甲基醚乙酸酯仅溶解中间区域(22),留下光刻胶图案化成具有光学期间(p1)的间距(p2)的一半。 或者,光致抗蚀剂从非极性区域和极性区域移除,仅再次以与光学周期(p1)相同的间距(p2)为中间区域(22)。