专利检索 ap:("Harsaran Singh Bhatia" OR "Harry Charles Calhoun" OR "Robert Leonard Melhado" OR "Randolph Huff Schnitzel") AND inv:"Harry Charles Calhoun" 第 1 页

1.

发明授权
Method of forming Schottky barrier junctions having improved barrier height 失效
标题翻译：形成具有改进的障碍物高度的肖特基阻挡结的方法

公开(公告)号：US3987216A

公开(公告)日：1976-10-19

申请号：US645766

申请日：1975-12-31

申请人： Harsaran Singh Bhatia , Harry Charles Calhoun , Robert Leonard Melhado , Randolph Huff Schnitzel

发明人： Harsaran Singh Bhatia , Harry Charles Calhoun , Robert Leonard Melhado , Randolph Huff Schnitzel

IPC分类号： H01L29/872 , H01L21/28 , H01L21/285 , H01L29/47 , B05D5/12

CPC分类号： H01L21/28537 , H01L29/47 , Y10S438/909

摘要： A method is disclosed for forming Schottky barrier junctions having improved barrier height characteristics. The method involves the use of a layer of polysilicon deposited upon the Schottky metal prior to sintering. The polysilicon layer acts as a source from which silicon is diffused into the metal during the sintering operation. After sintering the junction is quenched or cooled at a rapid rate whereby outdiffusion of the silicon is prevented.