公开(公告)号：US07087563B2

公开(公告)日：2006-08-08

申请号：US10467354

申请日：2002-12-04

申请人： Hayato Iwamoto ,  Ryuichi Kanamura ,  Ai Endou ,  Tomoko Suzuki ,  Toshitaka Hiraga

发明人： Hayato Iwamoto ,  Ryuichi Kanamura ,  Ai Endou ,  Tomoko Suzuki ,  Toshitaka Hiraga

IPC分类号： C11D7/50

CPC分类号： G03F7/425 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/76802

摘要： A resist stripping composition capable of reliably stripping off resist residue or polymer residue and keeping damage to the interconnects to a minimum and a method of producing a semiconductor device using the same, where the resist stripping composition comprises a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and has a hydrogen ion concentration of at least 8. The method of production of a semiconductor device comprises dry etching a metal layer or a semiconductor layer on a semiconductor substrate to form an interconnect layer having a predetermined pattern or forming an insulation layer on a semiconductor substrate formed with an interconnect layer and dry etching this to a predetermined pattern, then performing chemical treatment using a resist stripping composition comprising a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and having a hydrogen ion concentration of at least 8.

摘要翻译： 能够可靠地剥离抗蚀剂残留物或聚合物残余物并将互连件的损伤保持最小化的抗蚀剂剥离组合物和使用其的制造半导体器件的方法，其中抗蚀剂剥离组合物包含氢氟酸盐和不含碱 包括金属，有机溶剂，糖醇如木糖醇和水，并且具有至少8的氢离子浓度。半导体器件的制造方法包括在半导体衬底上干蚀刻金属层或半导体层 以形成具有预定图案的互连层或在形成有互连层的半导体衬底上形成绝缘层，并将其干蚀刻至预定图案，然后使用包含氢氟酸盐和碱的抗蚀剂剥离组合物进行化学处理 不包括金属，有机溶剂，糖醇如木糖醇，以及水和 氢离子浓度至少为8。